Electronic Components Supplier - NTE Electronics, Inc.
Silicon Transistor Selector Guide
(Listed in Order of Package and BVCBO Rating, *TC = +25°C)
NTE Type Number Application Maximum
Breakdown Voltage

(Volts)
Maximum
Collector
Current

(Amps)
Maximum
Collector
Dissipation

(Watts)
Typical
Forward
Current
Gain
Typical
Freq

(MHz)
Package Style
NPN PNP BVCBO BVCEO IC PD hFE fT
278 - RF Amp, Broad Band 40 20 0.4 3.5 40 Min 1400
77 - Broad Band, CATV 50 30 0.4 3.5 30 Min 1800
311 - Driver, VHF/UHF OSC 55 30 0.4 5 * 200 800 Min
329 - RF Pwr Amp - 30 1.5 Peak 5 - -
195A - RF Pwr Amp, Driver 70 70 (CER) 1.5 8 30 Min 150
123 - Amp, Gen Purp 75 40 0.8 0.4 200 300 Min
282 - Final RF Pwr Amp, Sw 100 60 4 10 * 100 140
16005 16004 High Current Gen Purpose 100 75 2 10 30 Min -
324 323 Amp, Gen Purp 120 100 1.5 0.8 90/80 20 Min
128 129 Amp, Gen Purpose 140/80 80 1 0.8/1.25 90 Min 100 Min
2347 - Med Pwr Gen Purp 150 80 5 7 * 40 Min 50 Min
- 2645 Amp, Gen Purp 175 175 1 1 90 Min -
154 - High Vltg Video Output 300 300 0.2 1 100 80
396 397 Pwr Amp, High Vltg 450/350 350/300 1 5 */10 * 40Min/
30 Min
15 Min
224 - Final RF Pwr Output 60 60 (CEV) 2 10 60 200
225 - High Speed Sw Linear Amp 450 350 1 10 40 Min 15
- Final RF Pwr Out 80 40 3 Pulse 10 50 250
74 - Amp, Gen Purpose, Sw 100 100 7 60 60 Min 30
96 - Swing Pwr Transistor 100 100 7 60 60 Min 30 Min
95 - High Vltg, Sw Isolated Stud 250 250 3 40 90 Min 40
72 - High Current, Fast Sw 100 (CES) 80 10 115 70 Min 30 Min
73 - High Vltg Sw 220 200 10 85 15 Min 40
71 - High Current, Fast Sw 150 90 20 200 20 Min 20
70 - Pwr Amp, High Vltg, Sw 180 150 50 250 30 Min -
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