Electronic Components Supplier - NTE Electronics, Inc.
Silicon 3-Layer Bilateral Trigger Diodes (DIAC)
NTE Type
Number		 Breakover Voltage
(Forward & Reverse)
(Volts)		 Maximum
Breakover Current
(µA)		 Maximum
Peak Pulse
(Amps)		 Minimum
Switching Voltage
Change
(Both Directions)
(Volts)		 DO7 / DO35
Maximum
Power Dissipation
(mW)
VBO I(BR)1 & I(BR)2 IPulse ΔV PD
6407 28 ± 4 100 2 6 250
6408 32 ± 4 100 2 6 250
6411 40 ± 4 100 2 6 250
6412 63 ± 4 100 2 6 250
DESCRIPTION:
The NTE6407, NTE6408, NTE6411, and NTE6412 bilateral trigger DIACs offer a range of voltage characteristics from 28 to 63 volts.

The DIAC semiconductor is a full-wave or bidirectional thyristor. It is triggered from a blocking-to-conduction state for either polarity of applied voltage exceeding the breakover voltage rating of the DIAC.
 
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