Silicon Darlington Transistors


(Listed in Order of NTE Part No., *TC = +25°C)

NTE Type No. Maximum
Continuous
Collector
Current

(Amps)
Maximum Breakdown Voltage Maximum
Continuous
Base
Current

(mA)
Typical
Forward
Current
Gain
Maximum
Collector
Power
Dissipation

(Watts)
Case
Style
NPN PNP Collector
to Base

(Volts)
Collector
to Emitter

(Volts)
Emitter
to Base

(Volts)
IC BVCBO BVCEO BVEBO IB hFE PD
- 17 0.5 100 100 12 - 10000 0.625
46 - 0.5 100 100 12 - 10000 0.625
48 - 1 60 50 (CES) 12 - 25000 Min 1
97 - 10 500 400 8 2500 40 Min 150
98 - 20 700 (CEV) 500 8 2500 40 Min 175 *
99 - 50 600 400 8 10000 25 Min 250
172A - 0.3 40 40 12 50 7000 Min 0.4
214 - 10 70 60 6 - 5000 2.5
215 - 8 110 100 6 - 4000 60
243 244 8 80 80 5 120 2500 100
245 246 10 80 80 5 200 4000 150
247 248 12 100 100 5 200 750 Min 150 *
249 250 16 100 100 5 500 4000 150
251 252 20 100 100 5 500 2500 160
253 254 4 80 80 5 100 2000 40 *
256 - 28 600 400 10 6A 30 Min 150
261 262 8 100 100 5 120 1000 Min 65
263 264 10 100 100 5 250 1000 Min 65
265 - 0.5 50 (CES) 50 13 75 10000 Min 6.25 *
266 - 0.5 50 50 13 - 40000 Min 6.25
267 - 0.5 30 30 13 - 90000 Min 6.25
268 269 2 50 50 13 100 1000 Min 10
270 271 10 100 100 5 500 1000 Min 125 TO218/TO3P
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