Power MOS Field Effect Transistor
NTE
Type
Number		 Description
and
Application		 Case
Style		 Drain to
Source
Breakdown
Voltage
(Volts)		 Gate to
Source
Cutoff
Voltage
(Volts)		 Gate to
Source
Breakdown
Voltage
(Volts)		 Maximum
Continuous
Drain
Current
(Amps)		 Static
Drain to
on Source
Resistance
(Ohms)		 Input
Capacitance
(pf)		 Forward
Transcon-
ductance
(mhos)		 Device
Total Power
Dissipation
@TC=25°C
(Watts)
BVDSS Vgs(Off) BVGSS ID rDS(On) Ciss gfs PD
2390 N-CHANNEL
Enhancement
Mode High
Speed Switch		 TO220 60 Min 4.5 Max ±20 Max 12 0.2 Max 400 Max 4 Min 75 Max
td(off) = 80ns, td(on) = 60ns, tf = 110ns, tr = 160ns
2392 N-CHANNEL
Enhancement
Mode High
Speed Switch		 TO3 100 Min 4 Max ±20 Max 33 0.08 Max 3000 Max 9 Min 150 Max
td(off) = 125ns, td(on) = 35ns, tf = 100ns, tr = 100ns
2393 N-CHANNEL
Enhancement
Mode High
Speed Switch		 TO3P 500 Min 4 Max ±20 Max 9 0.7 Max 1900 Max 5 Min 150 Max
td(off) = 170ns, td(on) = 40ns, tf = 40ns, tr = 60ns
2394 N-CHANNEL
Enhancement
Mode High
Speed Switch		 TO3P 500 Min 4 Max ±20 Max 14 0.4 Max 3000 Max 9.3 Min 180 Max
td(off) = 150ns, td(on) = 35ns, tf = 70ns, tr = 50ns
2395 N-CHANNEL
Enhancement
Mode High
Speed Switch		 TO220 60 Min 4 Max ±20 Max 50 0.028 Max 1900 Max 15 Min 150 Max
td(off) = 45ns, td(on) = 14ns, tf = 92ns, tr = 110ns
2396 N-CHANNEL
Enhancement
Mode High
Speed Switch		 TO220 100 Min 4 Max ±20 Max 28 0.077 Max 1300 Typ 5.8 Min 150 Max
td(off) = 40ns, td(on) = 13ns, tf = 48ns, tr = 77ns
2397 N-CHANNEL
Enhancement
Mode High
Speed Switch		 TO220 400 Min 4 Max ±20 Max 10 0.55 Max 1400 Typ 5.8 Min 125 Max
td(off) = 50ns, td(on) = 14ns, tf = 24ns, tr = 27ns
2398 N-CHANNEL
Enhancement
Mode High
Speed Switch		 TO220 500 Min 4 Max ±20 Max 4.5 1.5 Max 610 Typ 2.5 Min 74 Max
td(off) = 42ns, td(on) = 82ns, tf = 16ns, tr = 16ns
2399 N-CHANNEL
Enhancement
Mode High
Speed Switch		 TO220 1000 Min 4 Max ±20 Max 3.1 5 Max 980 Typ 2.1 Min 125 Max
td(off) = 89ns, td(on) = 12ns, tf = 29ns, tr = 25ns

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