Insulated Gate Bipolar Transistors (IGBT)


NTE
Type
No.
Description
and
Application
Case
Style
Collector to
Emitter
Breakdown
Voltage
(Volts)
Gate to
Emitter
Cutoff
Voltage
(Volts)
Gate to
Emitter
Breakdown
Voltage
(Volts)
Maximum
Collector
Current
(Amps)
Collector to
Emitter
Saturation
Voltage
(Volts)
Input
Capacitance
(pf)
Device
Total Power
Dissipation
@ TC= +25°C
(Watts)
V(BR)CES VGE(Off) BVGES IC VCE(sat) Cies PD
3300 N-CHANNEL
Enhancement
Mode High
Speed Switch
TO220
Full
Pack
400 Min 7 Max ±25 Max 10 8.0 Max 1350 Typ 30 Max
tr = 0.50µs, ton = 0.50µs, tf = 6µs, toff = 7µs
3301 N-CHANNEL
Enhancement
Mode High
Speed Switch
TO220
Full
Pack
400 Min 7 Max ±25 Max 15 8.0 Max 2000 Typ 40 Max
tr = 0.50µs, ton = 0.50µs, tf = 6µs, toff = 7µs
3302 N-CHANNEL
Enhancement
Mode High
Speed Switch
TO220
Full
Pack
600 Min 6 Max ±20 Max 8 4.0 Max 650 Typ 30 Max
tr = 0.60µs, ton = 0.80µs, tf = 0.35µs, toff = 1µs
3303 N-CHANNEL
Enhancement
Mode High
Speed Switch
TO220
Full
Pack
600 Min 6 Max ±20 Max 15 4.0 Max 1100 Typ 35 Max
tr = 0.60µs, ton = 0.80µs, tf = 0.35µs, toff = 1µs
3310 N-CHANNEL
Enhancement
Mode High
Speed Switch
TO3P 600 Min 6 Max ±20 Max 15 4.0 Max 1100 Typ 100 Max
tr = 0.60µs, ton = 0.80µs, tf = 0.35µs, toff = 1µs
3311 N-CHANNEL
Enhancement
Mode High
Speed Switch
TO3P 600 Min 6 Max ±20 Max 25 4.0 Max 1400 Typ 150 Max
tr = 0.30µs, ton = 0.40µs, tf = 0.15µs, toff = 0.50µs
3320 N-CHANNEL
Enhancement
Mode High
Speed Switch
TO3PBL 600 Min 6 Max ±20 Max 50 2.0 Max 7900 Typ 240 Max
tr = 0.07µs, ton = 0.24µs, tf = 0.05µs, toff = 0.43µs
3322 N-CHANNEL
Enhancement
Mode High
Speed Switch
TO3PBL 900 Min 6 Max ±25 Max 60 2.7 Max 3800 Typ 170 Max
tr = 0.35µs, ton = 0.46µs, tf = 0.25µs, toff = 0.60µs
3323 N-CHANNEL
Enhancement
Mode High
Speed Switch
TO3PBL 1200 Min 6 Max ±20 Max 25 4.0 Max 3200 Typ 200 Max
tr = 0.30µs, ton = 0.40µs, tf = 0.25µs, toff = 0.80µs
DESCRIPTION
NTE's series of Insulated Gate Bipolar Transistors (IGBTs) combine the high input impedance and high speed characteristics of MOSFETs and the high conduction (low saturation voltage) characteristics of bipolar transistors. Their structure looks very much like a MOSFET except that MOSFETs use an N+ - N- type substrate whereas IGBTs use a P+ - N- type substrate.

The thyristor fromed by PNP - NPN transistor coupling has its base and emitter shorted by aluminum patterning to disable it from operating and is therefore considered irrelevant to the basic operation of IGBTs. Consequently, the equivalent circuit and basic operating mechanism of IGBTs are the same as those of a MOS-input inverted Darlington transistor comprised of an N-channel enhancement MOSFET in its input stage and a PNP transistor on the output stage.

IGBTs are constructed in such a way that first, the gate voltage is applied to form a channel and then the base current of the PNP transistor is supplied, letting the circuit turn on eventually as an IGBT. Conversely, when turned off, the channel is eliminated to turn off the base current. Thus, IGBTs are driven in exactly the same way as MOSFETs, and IGBTs have high input impedance characteristics just like MOSFETs.

IGBT Symbols




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