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| Optoisolators, Photon Coupled Bilateral Analog FET Output |
NTE
Type
No. |
Output
Configuration |
Total Device Ratings |
Maximum LED Ratings |
Photo FET Ratings |
Isolation
Voltage
Surge
(Volts) |
Total
Power
(mW) |
Forward
Current
(mA) |
Forward
Voltage
(V) |
Reverse
Voltage
(Volts) |
Drain to
Source
Breakdown
Voltage
(Volts) |
Drain
Current
(mA) |
On-State
Resistance
(Ohms) |
Turn-On
Time
(µs) |
Turn-Off
Time
(µs) |
| |
VISO |
PT |
IF |
VF |
VR |
V(BR)DSS |
ID |
RDS(ON) |
ton |
toff |
| 3085 |
Bilateral Analog FET |
2500 |
300 |
60 |
1.75 |
62 |
±30 |
±100 |
200 |
15 |
15 |
|
| |
Description:
The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. |
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