Electronic Components Supplier - NTE Electronics, Inc.
Phototransistor Detectors
NTE
Type
No.
Description Collector
to Base
Voltage

(Volts)
Maximum
Collector
Current

(mA)
Maximum Collector
Dark
Current
at +25°C

(nA)
Minimum
Light Current

(mA)
Maximum
Power
Dissipation
at +25°C

(mW)
Typical
Response
Time

(µs)
Package
V(BR)CBO IC ID LL PD
3031 NPN, Si, Visible and IR 30 (VCEO) 40 100 @
10V VCE
1.0 150 6 TO46 Flat Lens
3032 NPN, Si, Visible and IR 80 40 20 @
5V VCE
12 200 2 TO46 Dome Lens
3034A NPN, Si, Photo/Light Detector 30 (VCEO) - 100 @
10V VCE
100µA @
5V
150 -  
3035A NPN, Si, Photo Darlington 60 (VCEO) - 100 @
10V VCE
5 @ 5V 150 -  
3036 NPN, Si, Darlington Visible & Near IR 50 250 100 12 250 151 TO18 Dome Lens
3037 NPN, Si, Visible and IR 50 50 200 @
30V VCE
60µA @
3V
150 2 TO18 Dome Lens
3120 NPN, Si, Phototransistor 20 (VCEO) 30 1µA @
10V VCE
1 Typ 100 10 Max  
3122 NPN, Si, Darlington, IR, Visible
Cut-Off, Narrow Acceptance
35 (VCEO) 50 10µA @
10V VCE
1.5 75 80  
3123 NPN, Si, Darlington, IR, Visible
Cut-Off
35 (VCEO) 50 10µA @
10V VCE
0.2 75 400  
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