Phototransistor Detectors


NTE
Type
No.
Description Collector
to Base
Voltage

(Volts)
Maximum
Collector
Current

(mA)
Maximum Collector
Dark
Current
at +25°C

(nA)
Minimum
Light Current

(mA)
Maximum
Power
Dissipation
at +25°C

(mW)
Typical
Response
Time

(µs)
Package
V(BR)CBO IC ID LL PD
3031 NPN, Si, Visible and IR 30 (VCEO) 40 100 @
10V VCE
1.0 150 6 TO46 Flat Lens
3032 NPN, Si, Visible and IR 80 40 20 @
5V VCE
12 200 2 TO46 Dome Lens
3034A NPN, Si, Photo/Light Detector 30 (VCEO) - 100 @
10V VCE
100µA @
5V
150 -  
3036 NPN, Si, Darlington Visible & Near IR 50 250 100 12 250 151 TO18 Dome Lens
3037 NPN, Si, Visible and IR 50 50 200 @
30V VCE
60µA @
3V
150 2 TO18 Dome Lens
3039 NPN, Si, Visible and IR 30 - 100 @
15V VCE
7µA @
5V
70 - 3mm (T1) clear
3120A NPN, Si, Phototransistor 30 (VCEO) 50 1µA @
20V VCE
- 100 10  
3122 NPN, Si, Darlington, IR, Visible
Cut-Off, Narrow Acceptance
35 (VCEO) 50 10µA @
10V VCE
1.5 75 80  
3123 NPN, Si, Darlington, IR, Visible
Cut-Off
35 (VCEO) 50 10µA @
10V VCE
0.2 75 400  
30051 NPN, Si, Phototransistor 30 (VCEO) 1.5 Typ 30 - 150 15 -
30052 NPN, Si, Phototransistor 30 (VCEO) 12 30 - 150 15 -
30133 NPN, Si, IR Phototransistor
(use with NTE30132)
30 (VCEO) 20 100 - 75 15 1.9mm Dome Lens




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