Electronic Components Supplier - NTE Electronics, Inc.
Silicon Bilateral Switch (SBS)
NTE Type
Number
Case Style Maximum Ratings
Peak
Recurrent
Forward
Current
(Amps)
DC Forward
Anode
Current
(mA)
Power
Dissipation
(mW)
Switching
Voltage
(Volts)
Switching
Current
(A)
Holding
Current
(mA)
Off-State
Current
@ 5V
(A)
On-State
Forward
Voltage Drop
IF = 175mA
(Volts)
IFp IF PD VS IS IH IB VF
6403 TO92 / TO98 1 175 300 6 Min to 10 Max 500 1.5 1 1.7
DESCRIPTION:
Silicon Bilateral Switches are specifically designed and characterized for applications where stability of switching voltage over a wide temperature range and well matched bilateral characteristics are an asset. They are ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control circuits.
 
Silicon Unilateral Switch (SUS)
NTE Type
Number
Case Style Switching
Forward
Voltage
(Volts)
Forward
Current
(A)
Holding
Current
(mA)
Power
Dissipation
(mW)
DC Forward
Anode
Current
(mA)
Peak
Recurrent
Forward
Current
(Amps)
Forward
Voltage
Drop @ IF
(mW)
Switching Speeds (s)
Turn-On Turn-Off
VS IS IH PD IF IF(Peak) VF ton toff
6404 TO98 Min Max 200 0.75 300 175 1 1.5 1 25
7 9
DESCRIPTION:
The NTE6404 is a silicon planer, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four layer diode. This device is designed to switch at 8V with a 0.02%/C temperature coefficient. A gated lead is provided to eliminate rate effect, obtaining triggering at lower voltages and to obtain transient free wave forms.

Silicon Unilateral Switches are specifically designed and characterized for use in monostable and bistable applications where low cost is of prime importance.

 
Silicon Controlled Switch (SCS)
NTE Type
Number
Case Style Polarity Maximum Ratings DC
Current
Gain
@ VCE = 2V,
IE = 10mA
Collector
to Base
Breakdown
Voltage
(Volts)
Emitter
to Base
Breakdown
Voltage
(Volts)
Collector
to Emitter
Breakdown
Voltage
RBE = 10k
(Volts)
Emitter
Current
(mA)
Collector
Current
(mA)
Peak
Emitter
Current
(A)
Holding
Current
(mA)
Power
Dissipation
(mW)
V(BR)CBO V(BR)EBO V(BR)CER IE IC IEM IH PD hFE
239 TO72 PNP -70 -70 -70 175 175 2.5 1 275 50 MIn
NPN 70 5 70 -175 -2.5
 
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