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Silicon Bilateral Switch (SBS)

NTE Type Number	Case Style	Maximum Ratings
NTE Type Number	Case Style	Peak Recurrent Forward Current (Amps)	DC Forward Anode Current (mA)	Power Dissipation (mW)	Switching Voltage (Volts)	Switching Current (µA)	Holding Current (mA)	Off-State Current @ 5V (µA)	On-State Forward Voltage Drop I_F = 175mA (Volts)
		I_Fp	I_F	P_D	V_S	I_S	I_H	I_B	V_F
6403	TO92 / TO98	1	175	300	6 Min to 10 Max	500	1.5	1	1.7

DESCRIPTION:
Silicon Bilateral Switches are specifically designed and characterized for applications where stability of switching voltage over a wide temperature range and well matched bilateral characteristics are an asset. They are ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control circuits.

Silicon Unilateral Switch (SUS)

NTE Type Number	Case Style	Switching Forward Voltage (Volts)		Forward Current (µA)	Holding Current (mA)	Power Dissipation (mW)	DC Forward Anode Current (mA)	Peak Recurrent Forward Current (Amps)	Forward Voltage Drop @ I_F (mW)	Switching Speeds (µs)
NTE Type Number	Case Style	Switching Forward Voltage (Volts)		Forward Current (µA)	Holding Current (mA)	Power Dissipation (mW)	DC Forward Anode Current (mA)	Peak Recurrent Forward Current (Amps)	Forward Voltage Drop @ I_F (mW)	Turn-On	Turn-Off
		V_S		I_S	I_H	P_D	I_F	I_F(Peak)	V_F	t_on	t_off
6404	TO98	Min	Max	200	0.75	300	175	1	1.5	1	25
6404	TO98	7	9	200	0.75	300	175	1	1.5	1	25

DESCRIPTION:
The NTE6404 is a silicon planer, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four layer diode. This device is designed to switch at 8V with a 0.02%/°C temperature coefficient. A gated lead is provided to eliminate rate effect, obtaining triggering at lower voltages
and to obtain transient free wave forms.

Silicon Unilateral Switches are specifically designed and characterized for use in monostable and bistable applications where low cost is of prime importance.

Silicon Controlled Switch (SCS)

NTE Type Number	Case Style	Polarity	Maximum Ratings								DC Current Gain @ V_CE = 2V, I_E = 10mA
NTE Type Number	Case Style	Polarity	Collector to Base Breakdown Voltage (Volts)	Emitter to Base Breakdown Voltage (Volts)	Collector to Emitter Breakdown Voltage R_BE = 10k (Volts)	Emitter Current (mA)	Collector Current (mA)	Peak Emitter Current (A)	Holding Current (mA)	Power Dissipation (mW)	DC Current Gain @ V_CE = 2V, I_E = 10mA
			V_(BR)CBO	V_(BR)EBO	V_(BR)CER	I_E	I_C	I_EM	I_H	P_D	h_FE
239	TO72	PNP	-70	-70	-70	175	175	2.5	1	275	50 MIn
239	TO72	NPN	70	5	70	-175	175	-2.5	1	275	50 MIn

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