General Purpose Diodes & Rectifiers - Leaded

Surface Mount Types click here **IF in ascending order – low to high, *TC = +25°C
NTE
Type
No.
Material Description and Application Maximum
Average
Forward
Current
(Amps)
Maximum
Peak
Reverse
Voltage
(Volts)
Case
Style
Max Peak
Surge
Forward
Current
(Amps)
Maximum
Forward
Voltage
Drop
(Volts)
Reverse
Recovery
Time
(ns)
**IF PRV IFSM VF trr
583 Si Schottky Switching for High Level UHF/VHF
Det & Pulse Application
0.015 70 DO35 0.05 0.41 @ 1mA -
112 Si TV UHF Mixer 0.03 5 DO35 0.06 0.55 @ 10mA -
584 Si Schottky Switching for High Level UHF/VHF
Det & Pulse Application
0.035 20 DO35 0.1 0.41 @ 1mA -
110MP Ge Gen Purp, AFC, Matched Diode Pair 0.05 40 DO7 0.5 1 @ 9mA -
109 Ge Gen Purp, Fast Switch 0.06 100 DO7 0.5 1 @ 200mA -
120 Se Gen Purp, Color TV Convg Rectifier 0.065 18 - - - -
178MP Si Matched Diode Pair AFC, AFT, etc. 0.07 50 DO7 0.1 1 @ 5mA -
110A Ge General Purpose 0.15 30 DO7 - 1 @ 5mA -
177 Si Fast Sw, Det, etc. 0.25 200 DO35 1 1 @ 0.1 50
590 Si Dual, Common Cathode, Sw 0.3 75 - 6 @ 1µs 1.2 @ 0.1A 3
519 Si Fast Sw Diode 0.3 100 DO35 2 1 @ 10mA 4
506 Si Sw, Fast Recovery, Bst, Damper, Blanking 0.5 1500 - 30 2.5 @ 500mA 500
558 Si High Voltage Fast Recovery Rectifier 0.5 1500 DO41 30 2.4 @ 0.5A 250
525 Si High Vltg Fast Recovery Sw 0.5 2000 DO41 30 2 @ 1A 500
585 Si Fast Switching Schottky Barrier 1 40 DO41 25 0.6 @ 1A -
507 Si Fast Recovery 1 50 DO41 30 1.1 @ 1A 200
578 Si Schottky Barrier 1 90 DO41 25 0.79 @ 1A -
587 Si Switch, Ultra Fast 1 200 DO41 30 0.95 @ 1A 35
574 Si Fast Switching, Fast Recovery 1 400 DO41 30 1 @ 1A 35
116 Si General Purpose Rectifier 1 600 DO41 30 1.1 @ 1A Typ -
117 Si Gen Purp Metal Case Rectifier 1 600 DO26 - 1.2 @ 0.5A -
552 Si Gen Purp Rect, Fast Rec, Fast Sw 1 600 DO41 30 1.1 @ 1A 200
125 Si General Purpose Rectifier 1 1000 DO41 30 0.93 @ 1A Typ -
575 Si Fast Switching, Fast Recovery 1 1000 DO41 30 1.5 @ 1A 70
551 Si Fast Recovery Rect Metal Case 1 1500 - 60 1.5 @ 2A 1µs
636 Si Controlled Avalanche Diode 1.6 600 - 40 1.25 @ 2A -
634 Si Controlled Avalanche Diode 1.9 400 - 50 1.05 @ 2A -
635 Si Controlled Avalanche Diode 2 200 - 50 0.98 @ 2A -
156 Si General Purpose Rectifier 2 1000 DO15 70 1.1 @ 2A -
638 Si Damper Diode for TV Applications 2.5 1600 - 50 1.3 @ 2.5A 4
586 Si Fast Switching Schottky Barrier 3 40 DO27 80 0.525 @ 3A -
579 Si Schottky Barrier 3 90 DO27 80 0.74 @ 3A -
646 Si Schottky Barrier 3 100 DO201AD 80 0.85 @ 3A -
588 Si Switch, Ultra Fast 3 200 DO127 125 0.95 @ 3A 35
648 Si Schottky Barrier 3 200 DO201AD 80 0.9 @ 3A -
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