Cookie Consent by TermsFeed.com
NTE Logo
NTE Logo Mobile
Worldwide supplier of high quality electrical / electronic components
Call Us: +800-631-1250

Worldwide supplier of high quality electrical / electronic components

Call Us: +800-631-1250
ISO logo

Semiconductors

SIDAC - Bidirectional Thyristor Diodes

(For Pulse Generating and Switching Applications)
NTE Type
Number
Breakover
Voltage
(Volts)
Maximum Ratings Holding
Current
(Amps)
Power
Dissipation
(mW)
ON
Voltage
(Volts)
Effective
Current
(Amps)
Surge
Current
(Amps)
VBO VT ITRMS ITSM IHold PD
6415 40 to 60 1.5 1 13 50 850
6416 55 to 65 1.5 1 13 50 850
6417 95 to 113 1.5 1 13 50 850
6418 104 to 118 1.5 1 13 50 850
6419 110 to 125 1.5 1 13 50 850
Storage Temperature:  -30° to +125°C
Junction Temperature:  +125°C
 
Description:
The SIDAC is a silicon bilateral voltage triggered switch with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current of the device.
 
Applications:
  • High Voltage Lamp Ignitors
  • Natural Gas Ignitors
  • Gas Oil Ignitors
  • High Voltage Power Supplies
  • Xenon Ignitors
  • Overvoltage Protection
  • Pulse Generators
  • Fluorescent Lighting Ignitors