NTE2317
Silicon NPN Transistors
High Voltage, Fast Switching Power Darlington

Description:

The NTE2317 is a silicon multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter circuits for motor controls. Controlled performasnce in the linear region make this device particularly suitable for car ignitions where current limiting is achieved desaturation the Darlington.

Features:

Applications:

Absolute Maximum Ratings:
Collector-Emitter Voltage (VBE = 0), VCES 500V
Collector-Emitter Voltage (IB = 0), VCEO 450V
Emitter-Base Voltage (IC = 0), VEBO 5V
Collector Current, IC
            Continuous
15A
            Peak (tp </= 10ms) 30A
Base Current, IB
            Continuous
1A
            Peak (tp </= 10ms) 5A
Total Power Dissipation (TC </= +25°C), Ptot 125W
Operating Junction Temperature, TJ +150°C
Storage Temperature Range, Tstg -40° to +150°C
Thermal Resistance, Junction-to-Case, RthJC 1.0°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 450 - - V
Collector Cutoff Current ICES VCE = 500V, VBE = 0 - - 1 mA
VCE = 500V, VBE = 0, TC = +125°C - - 5 mA
ICEO VCE = 450V, IB = 0 - - 1 mA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 - - 50 mA
ON Characteristics (Note 1)
Collector-Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 150mA - 1.09 1.8 V
Base-Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 150mA - 1.77 2.2 V
DC Current Gain hFE IC = 5A, VCE = 10V 300 - -  
Diode Forward Voltage VF IF = 10A - 1.43 2.8 V
Switching Characteristics (Switching Times on Inductive Load)
Storage Time ts VCC = 12V, VBE = 0, IC = 7A, IB = 70mA, RBE = 47 Ohm, LB = 7mH, V = 300V - 15 - µs
Fall Time tf - 0.5 - µs
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.

Schematic Diagram

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