NTE2328 (NPN) & NTE2329 (PNP)
Silicon Complementary Transistors
Audio Power Output

Features:

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO 200V
Collector-Emitter Voltage, VCEO 200V
Emitter-Base Voltage, VEBO 5V
Collector Current, IC 15A
Base Current, IB 1.5A
Collector Power Dissipation (TC = +25°C), PC 150W
Operating Junction Temperature, TJ +150°C
Storage Temperature Range, Tstg -55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0 200 - - V
Collector Cutoff Current ICBO VCB = 200V, IE = 0 - - 5 µA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 - - 5 µA
DC Current Gain hFE IC = 1A, VCE = 5V 55 - 160  
IC = 8A, VCE = 5V 35 60 -  
Collector-Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 1A - 1.5 3.0 V
Base-Emitter Voltage VBE VCE = 5V, IC = 8A - 1.0 1.5 V
Transition Frequency fT IC = 1A, VCE = 5V - 25 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 470 - pF

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