NTE2365
Silicon NPN Transistor
High Voltage Horizontal Deflection Output

Features:

Absolute Maximum Ratings: (TA = +25°C unles otherwise specified)
Collector-Base Voltage, VCBO 1500V
Collector-Emitter Voltage, VCEO 800V
Emitter-Base Voltage, VEBO 6V
Collector Current, IC
            Continuous
            Peak		 15A
35A
Collector Dissipation, PC 180W
Operating Junction Temperature, TJ +150°C
Storage Temperature Range, Tstg -55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 800V, IE = 0 - - 10 µA
ICES VCE = 1500V, RBE = 0 - - 1.0 mA
Collector Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 800 - - V
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 1.0 mA
Collector-Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 2.5A - - 5.0 V
Base-Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 2.5A - - 1.5 V
DC Current Gain hFE VCE = 5V, IC = 1A 8 - 30  
VCE = 5V, IC = 10A 4 - 8  
Storage Time tstg IC = 8A, IB1 = 1.6A, IB2 = -3.2A - - 3.0 µs
Fall Time tf - - 0.2 µs

  Home  Index  Back