| Drain-Source Voltage, VDSS | 60V |
| Drain-Gate Voltage (RGS = 20k Ohm), VDGR | 60V |
| Continuous Gate-Source Voltage, VGS | ±30V |
| Drain Current, ID Continuous Pulsed |
35A 152A |
| Maximum Power Dissipation, PD | 125W |
| Operating Junction Temperature, TJ | +175°C |
| Storage Temperature Range, Tstg | -55° to +175°C |
| Maximum Thermal Resistance, Junction-to-Case, RthJC | 1.2°C/W |
| Typical Thermal Resistance, Junction-to-Ambient, RthJA | 60°C/W |
Electrical Characteristics: (TA = +25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Static Ratings | ||||||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 0.25mA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 1mA | 2.1 | 3.0 | 4.0 | V |
| Zero Gate Voltage Drain Current | IDSS | VDSS = 60V, VGS = 0 | - | 1 | 10 | µA |
| VDSS = 60V, VGS = 0, TJ = +125°C | - | 0.1 | 1.0 | mA | ||
| Gate-Body Leakage Current, Forward | IGSSF | VGSF = 20V, VDS = 0 | - | - | 100 | nA |
| Gate-to-Source Leakage Current | IGSS | VGS = ±30V, VDS = 0 | - | 10 | 100 | nA |
| Drain-to-Source On-Resistance | RDS(on) | VGS = 10V, ID = 20A | - | 40 | 45 | m Ohm |
| Dynamic Ratings | ||||||
| Forward Transconductance | gfs | VDS = 25V, ID = 20A | 8.0 | 13.5 | - | mhos |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1MHz | - | 1650 | 2000 | pF |
| Output Capacitance | Coss | - | 560 | 750 | pF | |
| Reverse Transfer Capacitance | Crss | - | 300 | 400 | pF | |
| Turn-On Delay Time | td(on) | VCC = 30V, VGS = 10V, ID = 3A, RGS = 50 Ohm | - | 25 | 40 | ns |
| Rise Time | tr | - | 60 | 90 | ns | |
| Turn-Off Delay Time | td(off) | - | 125 | 160 | ns | |
| Fall Time | tf | - | 100 | 130 | ns | |
| Internal Drain Inductance | Ld | Measured from the contact screw on tab to center of die | - | 3.5 | - | nH |
| Measured from the drain lead 6mm from package to center of die |
- | 4.5 | - | nH | ||
| Internal Source Inductance | Ls | Measured from the source lead 6mm from the package to the source bond pad. | - | 7.5 | - | nH |
| Reverse Diode | ||||||
| Continuous Reverse Drain Current | IDR | - | - | 41 | A | |
| Pulsed Reverse Drain Current | IDRM | - | - | 164 | A | |
| Diode Forward On-Voltage | VSD | IF = 41A, VGS = 0 | - | 1.4 | 2.0 | V |
| Reverse Recovery Time | trr | IF = 41A, VGS = 0, VR = 30V, -dIF/dt = 100A/µs | - | 60 | - | ns |
| Reverse Recovery Charge | Qrr | - | 0.3 | - | nC | |
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