| Repetitive Peak Voltages, VDRM, VRRM NTE5374 NTE5375 |
600V 1200V |
| Non-Repetitive Peak Off-State Voltage, VDSM NTE5374 NTE5375 |
600V 1200V |
| Non-Repetitive Peak Reverse Blocking Voltage, VRSM NTE5374 NTE5375 |
700V 1300V |
| Average On-State Current (TC = +85°C, Single phase, 50Hz,180° sinewave), IT(AV) | 183A |
| RMS On-State Current, IT(RMS) | 355A |
| Continuous On-State Current, IT | 355A |
| Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM | |
| (t = 10ms, half sinewave, TJ(initial) = +125°C, VRM = 0.6VRRMmax) | 3500A |
| (t = 10ms, half sinewave, TJ(initial) = +125°C, VRM </= 10V) | 3850A |
| Maximum Permissible Surge Energy (TJ(initial) = +125°C), I2t | |
| (t = 10ms, VRM = 0.6VRRMmax) | 61.3 x 103A3sec |
| (t = 10ms, VRM </= 10V) | 74.1 x 103A3sec |
| (t = 3ms, VRM </= 10V) | 54.5 x 103A3sec |
| Peak Forward Gate Current (Anode Positive with Respect to Cathode), IFGM | 18A |
| Peak Forward Gate Voltage (Anode Positive with Respect to Cathode), VFGM | 12V |
| Peak Reverse Gate Voltage, VRGM | 5V |
| Average Gate Power Dissipation, PG(AV) | 1.5W |
| Peak Gate Power Dissipation, PGM | 60W |
| Rate of Rise of Off-State Voltage (To 80% VDRM, Gate Open-Circuit), dv/dt | 200V/µs |
| Rate of Rise of On-State Current (Repetitive, Gate Drive 20V, 20 Ohm with tr </= 1µs), di/dt | 500A/µs |
| Fusing Current (TJ = -40° to +100°C, t = 1 to 8.3ms), I2t | 25A |
| Peak On-State Voltage (ITM = 600A), VTM | 1.96V |
| Forward Conduction Threshold Voltage, VO | 1.4V |
| Forward Conduction Slope Resistance, r | 0.937m Ohm |
| Repetitive Peak Off-State Current (At Rated VDRM), IDRM | 30mA |
| Repetitive Peak Reverse Current (At Rated VDRM), IRRM | 30mA |
| Maximum Gate Current Required to Fire All Devices (TJ = +25°C, VA = 6V, IA = 1A), IGT | 200mA |
| Maximum Gate Voltage Required to Fire All Devices (TJ = +25°C, VA = 6V, IA = 1A), VGT | 3V |
| Maximum Holding Current (TJ = +25°C, VA = 6V, IA = 1A), IH | 600mA |
| Maximum Gate Voltage Which Will N ot Trigger Any Device, VGD | 0.25V |
| Typical Stored Charge (ITM = 300A, dir/dt 20A/µs, VRM = 50V, 50% Chord Value), Qrr | 50µC |
| Typical Circuit Commuataed Turn-Off Time (ITM = 300A, dir/dt 20A/µs, dv/dt = 20V/µs to 80% VDRM), tq | 25 - 35µs |
| Operating Temperature Range, THS | -40° to +125°C |
| Storage Temperature Range, Tstg | -40° to +150°C |
| Thermal Resistance, Junction-to-Case, RthJC | 0.04°C/W |
