NTE5400 thru NTE5406
Silicon Controlled Rectifier (SCR)
0.8 Amp, Sensitive Gate

Description:

The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR-thyristor) rated at 800mA RMS maximum on0state current, with rated voltages up to 600 volts. These devices feature 200µA gate sensitivity, 5mA holding current, and 8A surge capabilities.

Available in a TO92 type plastic package, these devices feature excellent environmental stress and temperature cycling characteristics and, coupled with their small size and electrical performance, lend themselves to various types of control functions encountered with sensors, motors, lamps, relays, counters, triggers, etc.

Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +100°C), VRRM
            NTE5400
            NTE5401
            NTE5402
            NTE5403
            NTE5404
            NTE5405
            NTE5406
30V
60V
100V
150V
200V
400V
600V
Repetitive Peak Off-State Voltage (TC = +100°C), VDRXM
            NTE5400
            NTE5401
            NTE5402
            NTE5403
            NTE5404
            NTE5405
            NTE5406
30V
60V
100V
150V
200V
400V
600V
RMS On-State Current, IT(RMS) 0.8A
Peak Surge (Non-Repetitive) On-State Current (One Cycle, 50Hz or 60Hz), ITSM 8A
Peak Gate-Trigger Current (3µs Max), IGTM 500mA
Peak Gate-Power Dissipation (IGT </= IGTM for 3µs Max), PGM 20W
Average Gate-Power Dissipation, PG(AV) 200mW
Operating Temperature Range, Topr -40° to +100°C
Storage Temperature Range, Tstg -40° to +150°C
Typical Thermal Resistance, Junction-to-Case, RthJC 5°C/W
Typical Thermal Resistance, Junction-to-Ambient, RthJA 200°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off-State Current IRRM VRRM = Max Rating, VDRXM = Max Rating,
RGK = 1k Ohm, TC = +100°C
- - 50 µA
IDRXM - - 50 µA
Maximum On-State Voltage VTM IT = 1.2A (Peak) - - 1.7 V
DC Holding Current IH   - - 5 mA
DC Gate-Trigger Current IGT VD = 6V, RL = 100 Ohm - 50 200 µA
DC Gate-Trigger Voltage VGT VD = 6V, RL = 100 Ohm - - 0.8 V
I2t for Fusing Reference I2t > 1.5msec - - 0.15 A2sec
Critical Rate of Applied Forward Voltage dv/dtc TC = +100°C - 5 - V/µs

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