Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM, VRRM NTE5480 NTE5481 NTE5482 NTE5483 NTE5484 NTE5485 NTE5486 NTE5487 (This device is discontinued) |
25V 50V 100V 200V 300V 400V 500V 600V |
Forward Current RMS Current, ITRMS | 8A |
Peak Forward Surge Current (One Cycle, 60Hz, TJ = -40° to +100°C), ITSM | 100A |
Circuit Fusing (TJ = -40° to +100°C, t </= 8.3ms), I2t | 40A2sec |
Peak Gate Power, PGM | 5W |
Average Gate Power, PG(AV) | 0.5W |
Peak Gate Current, IGM | 2A |
Peak Gate Voltage (Note 2), VGM | 10V |
Operating Junction Temperature Range, TJ | -40° to +100°C |
Storage Temperature Range, Tstg | -40° to +150°C |
Typical Thermal Resistance, Junction-to-Case, RthJC | 1.5°C/W |
Typical Thermal Resistance, Junction-to-Ambient, RthJA | 1.5°C/W |
Note 1. | Ratings apply for zero or negative gate voltage. Devices shall not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage. |
Note 2. | Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode. |
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | |
Peak Forward or Reverse Blocking Current | IDRM, IRRM |
Rated VDRM or VRRM, Gate Open | TJ = +25°C | - | - | 10 | µA |
TJ = +100°C | - | - | 2 | mA | |||
Gate Trigger Current, Continuous DC | IGT | VD = 7V, RL = 100 Ohms, Note 3 | - | 10 | 30 | mA | |
TC = -40°C | - | - | 60 | mA | |||
Gate Trigger Voltage, Continuous DC | VGT | VD = 7V, RL = 100 Ohms | - | 0.75 | 1.5 | V | |
TC = -40°C | - | - | 2.5 | V | |||
TJ = +100°C | 0.2 | - | - | V | |||
Forward "ON" Voltage | VTM | ITM = 15.7A, Note 4 | - | 1.4 | 2.0 | V | |
Holding Current | IH | VD = 7V, Gate Open | - | 10 | 30 | mA | |
TC = -40°C | - | - | 60 | mA | |||
Turn-On Time (td + tr) | ton | IG = 20mA, IF = 5A, VD = Rated VDRM | - | 1 | - | µs | |
Turn-Off Time | toff | IF = 5A, IR = 5A, VD = Rated VDRM, dv/dt = 30V/µs | - | 15 | - | µs | |
TJ = +100°C | - | 25 | - | µs | |||
Forward Voltage Application Rate (Exponential) | dv/dt | Gate Open, TJ = +100°C, VD = Rated VDRM | - | 50 | - | V/µs |
Note 3. | For optimum operation, i.e. faster turn-on, lower switching losses, best di/dt capability, recommended IGT = 200mA minimum. |
Note 4. | Pulse Width = 1ms Max, Duty Cycle </= 1%. |