NTE5480 thru NTE5487
Silicon Controlled Rectifier (SCR)
8 Amp

Description:

The NTE5480 through NTE5487 are multi-purpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V.

Features:

Absolute Maximum Ratings: (TJ = -40° to +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM, VRRM
            NTE5480
            NTE5481
            NTE5482
            NTE5483
            NTE5484
            NTE5485
            NTE5486
            NTE5487 (This device is discontinued)
25V
50V
100V
200V
300V
400V
500V
600V
Forward Current RMS Current, ITRMS 8A
Peak Forward Surge Current (One Cycle, 60Hz, TJ = -40° to +100°C), ITSM 100A
Circuit Fusing (TJ = -40° to +100°C, t </= 8.3ms), I2t 40A2sec
Peak Gate Power, PGM 5W
Average Gate Power, PG(AV) 0.5W
Peak Gate Current, IGM 2A
Peak Gate Voltage (Note 2), VGM 10V
Operating Junction Temperature Range, TJ -40° to +100°C
Storage Temperature Range, Tstg -40° to +150°C
Typical Thermal Resistance, Junction-to-Case, RthJC 1.5°C/W
Typical Thermal Resistance, Junction-to-Ambient, RthJA 1.5°C/W

Note 1.Ratings apply for zero or negative gate voltage. Devices shall not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2.Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode.

Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Forward or Reverse Blocking Current IDRM,
IRRM
Rated VDRM or VRRM, Gate Open TJ = +25°C - - 10 µA
TJ = +100°C - - 2 mA
Gate Trigger Current, Continuous DC IGT VD = 7V, RL = 100 Ohms, Note 3   - 10 30 mA
TC = -40°C - - 60 mA
Gate Trigger Voltage, Continuous DC VGT VD = 7V, RL = 100 Ohms   - 0.75 1.5 V
TC = -40°C - - 2.5 V
TJ = +100°C 0.2 - - V
Forward "ON" Voltage VTM ITM = 15.7A, Note 4 - 1.4 2.0 V
Holding Current IH VD = 7V, Gate Open   - 10 30 mA
TC = -40°C - - 60 mA
Turn-On Time (td + tr) ton IG = 20mA, IF = 5A, VD = Rated VDRM - 1 - µs
Turn-Off Time toff IF = 5A, IR = 5A, VD = Rated VDRM, dv/dt = 30V/µs   - 15 - µs
TJ = +100°C - 25 - µs
Forward Voltage Application Rate (Exponential) dv/dt Gate Open, TJ = +100°C, VD = Rated VDRM - 50 - V/µs

Note 3.For optimum operation, i.e. faster turn-on, lower switching losses, best di/dt capability, recommended IGT = 200mA minimum.
Note 4.Pulse Width = 1ms Max, Duty Cycle </= 1%.

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