NTE5679
TRIAC
600V, 40A

Description:

The NTE5679 TRIAC may be gate truggering from a blocking to conduction state for either polarity of applied voltage and is designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls, and static switching relays. The triggering signal is normally applied between the gate and MT1.

Electrical Characteristics: (All measurements are at TA = +25°C, 60Hz with a resistive load unless otherwise specified)
Repetitive Peak Blocking Voltage (Note 1), VDRM 600V
RMS On-State Current (TC = 0° to +125°C, Conduction Angle of 360°), IT(RMS) 40A
Peak Surge Off-State Current (VDRM = 600V, TC +25°, Gate Open, Note 1), IDRM 200mA
Peak Surge Off-State Current (VDRM = 600V, TC +125°, Gate Open, Note 1), IDRM 5mA
Peak One-Cycle Surge Current, ITSM
            50Hz
            60Hz		 335A
400A
Non-Repetitive RMS Surge On-State Current for Fusing (IGT = 500mA, 8.3ms), I2t 664A2sec
Maximum DC Gate Trigger Current (VD = 12V, Quad I, II, III), IGT 100mA
Maximum DC Gate Trigger Voltage (VD = 12V, Quad I, II, III, TC = +25°C, Note 2), VGT 2.5V
Maximum DC Gate Trigger Voltage (VD = 12V, Quad I, II, III, TC = +125°C, Note 2), VGT 0.2V
Peak On-State Voltage (IT(RMS) = 40A, TC = +25°C, Note 1), VTM 1.8V
DC Holding Current (Gate Open, Note 1, Note 3), IH 120mA
Peak Gate Trigger Current (Pulse Width </= 10µs), IGTH 4A
Peak Gate Power Dissipation (Pulse Width </= 10µs), PGM 40W
Average Gate Power Dissipation, PG(AV) 800mW
Minimum Critical Rate of Rise of Off-State Voltage, dv/dt
            (VDRM = 600V, Gate Open, TC = +100°C, Note 1)		 375V/µs
Minimum Critical Rate of Rise of Off-State Voltage, dv/dt
            (VDRM = 600V, Gate Open, TC = +125°C, Note 1)		 250V/µs
Minimum Critical Rate of Rise of Commutation Voltage (Note 1), dv/dt(c)
            (VDRM = 600V, IT(RMS) = 40A, Commutating di/dt = 21.6A/msec, Gate Unenergized)		 4V/µs
Maximum Rate of Change of On-State Current (IGT = 200mA, Rise Time = 0.1µ), di/dt 150A/µs
Maximum Gate Controlled Turn-On Time (IGT = 500mA, Rise Time = 0.1µ), tgt 5µs
Operating Temperature Range, TJ 0° to +125°C
Storage Temperature Range, Tstg -20° to +125°C

Note 1.For either polarity of MT2 with reference to MT1 terminal.
Note 2.For either polarity of gate voltage (VGT with reference to MT1 terminal.
Note 3.Initial On-State Current = 400mA (DC).

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