NTE6090
Silicon Dual Power Rectifier

Description:

The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal.

Features:

Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM 45V
Working Peak Reverse Voltage, VRWM 45V
DC Blocking Voltage, VR 45V
Average Rectified Forward Current (VR = 45V, TC = +105°C), IF(AV)  
            Per Device 30A
            Per Diode 15A
Peak Repetitive Forward Current (Per Diode, VR = 45V, Square Wave, 20kHz), IFRM 30A
Non-Repetitive Peak Surge Current, IFSM
            (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz)		 200A
Peak Repetitive Reverse Current (2µs, 1kHz), IRRM 2A
Operating Junction Temperature Range, TJ -65° to +150°C
Storage Temperature Range, Tstg -65° to +175°C
Peak Surge Junction Temperature (Forward Current Applied), TJ(pk) +175°C
Voltage Rate of Change (VR = 45V), dv/dt 1000V/µs
Maximum Thermal Resistance, Junction-to-Case, RthJC 1.4°C/W
Maximum Thermal Resistance, Junction-to-Ambient, RthJA 40°C/W

Electrical Characteristics (Per Diode Leg): (Note 1)
Parameter Symbol Test Conditions Min Typ Max Unit
Instantaneous Forward Voltage vF iF = 20A, TC = +125°C - - 0.60 V
iF = 30A, TC = +125°C - - 0.72 V
iF = 30A, TC = +25°C - - 0.76 V
Instantaneous Reverse Current iR VR = 45V, TC = +125°C - - 100 mA
VR = 45V, TC = +25°C - - 1.0 mA

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle </= 2%.

TO3P TO218
 

  Home  Index  Back