NTE6129
Silicon Power Rectifier Diode
700 Amp

Features:

Applications:

Ratings and Characteristics:
Average Forward Current (TC = +55°C Max), IF(AV) 700A
Maximum Repetitive Peak Reverse Voltage, VRRM 1600V
Maximum Non-Repetitive Peak Reverse Voltage, VRSM 1700V
Maximum Reverse Current (TJ = +150°C), IRRM 50mA
Maximum Forward Surge Current, IFSM
            50Hz
            60Hz		 9300A
9730A
Operating Junction Temperature Range, TJ -40° to +150°C
Storage Temperature Range, Tstg -40° to +150°C
Thermal Resistance, Junction-to-Case (DC Operation, single side cooled), RthJC 0.092°C/W
Thermal Resistance, Case-to-Sink (DC Operation, double side cooled), RthCS 0.46°C/W
Maximum Mounting Force (±10%), F 9800 (1000) N (Kg)

Electrical Specifications:
Parameter Symbol Test Conditions Rating Unit
Maximum Average Forward Current IF(AV) 180° condition,
Half sine wave		 Double side cooled, TC = +55°C 700 A
Single side cooled, TC = +85°C 365 A
Maximum RMS Forward Current IF(RMS) @ +25°C heatsink temperature double side cooled 1320 A
Maximum Peak One-Cycle Non-Repetitive Surge Current IFSM t = 10ms Half sinewave current, rated VRRM reapplied, initial TJ = +150°C 7820 A
t = 8.3ms 8190 A
t = 10ms Half sinewave current, no voltage reapplied, initial TJ = +150°C 9300 A
t = 8.3ms 7820 A
Maximum I2t for Fusing I2t t = 10ms Rated VRRM reapplied, initial
TJ = +150°C		 306 A2s
t = 8.3ms 279 A2s
t = 10ms No voltage reapplied, initial
TJ = +150°C<		 432 A2s
t = 8.3ms 395 A2s
Maximum Peak Forward Voltage VFM TJ = +150°C, Ipk = 1500A, tp = 10ms 2.2 V

Recovery Characteristics:
TJ = +25°C typical trr @ 25% IRRM Test Conditions Max Values @ TJ = +150°C
Ipk
Square Pulse		 di/dt Vr trr
@ 25% IRRM		 Qrr Trr
2.0µs 1000A 50A/µs -50V 3.5µs 240µC 110A

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