| DC Blocking Voltage, VRM Working Peak Reverse Voltage, VDRM Peak Repetitive Reverse Voltage, VRRM NTE6200, NTE6206 NTE6202, NTE6208 NTE6210 |
200V 400V 600V |
| RMS Reverse Voltage, VR(RMS) NTE6200, NTE6206 NTE6202, NTE6208 NTE6210 |
200V 400V 600V |
| Peak Surge Current, Non-Repetitive (Per Diode, 1/2 Cycle at 60Hz, TC = +100°C), IFSM | 150A |
| Peak Surge Current, (Per Diode, 1sec at 60Hz, TC = +100°C), IFRM | 50A |
| Average Forward Current (Per Diode, TC = +100°C), IO | 15A |
| Fusing Data, I2t | 85A2sec |
| Operating Junction Temperature Range, TJ | -65° to +150°C |
| Storage Temperature Range, Tstg | -65° to +150°C |
| Maximum Thermal Resistance, Junction-to-Case, RthJC | 1.5°C/W |
| Electrical Characteristics: (TA = +25°C unless otherwise specified) | |
| Maximum Instantaneous Forward Voltage Drop (Per Diode @ 15A), VFM | 1.4V |
| Maximum Reverse Current (At rated VRM, TC = +100°C), IRM | 5mA |
| Maximum Reverse Recovery Time (IF = 1A, IA = 2A), trr | 200ns |