NTE6354 thru NTE6365
Silicon Power Rectifier Diode,
300 Amp

Features:

Ratings and Characteristics:
Average Forward Current (TC = +130°C Max), IF(AV)     300A
Maximum Repetitive Peak Reverse Voltage, VRRM
            NTE6354, NTE6355*
            NTE6356, NTE6357*
            NTE6358, NTE6359*
            NTE6362, NTE6363*
            NTE6364, NTE6365*
    400V
600V
1000V
1400V
1600V
Maximum Non-Repetitive Peak Reverse Voltage, VRSM
            NTE6354, NTE6355*
            NTE6356, NTE6357*
            NTE6358, NTE6359*
            NTE6362, NTE6363*
            NTE6364, NTE6365*
    500V
720V
1200V
1500V
1700V
Maximum Repetitive Peak Reverse Current (TJ = +200°C), IRRM
            NTE6354, NTE6355*
            NTE6356, NTE6357*
            NTE6358, NTE6359*
            NTE6362, NTE6363*
            NTE6364, NTE6365*
    40mA
40mA
30mA
30mA
30mA
Maximum Forward Surge Current, IFSM
            50Hz
            60Hz
    6550A
6850A
Fusing Current, I2t
            50Hz
            60Hz
    214000A2s
195000A2s
Maximum Operating Junction Temperature Range, TJ     -65° to +200°C
Maximum Storage Temperature Range, Tstg     -65° to +200°C
Maximum Internal Thermal Resistance, Junction-to-Case (DC Operation), RthJC     0.18K/W
Thermal Resistance, Case-to-Sink (Mounting surface flat, smooth, and greased), RthCS     0.08K/W
Mounting Torque (Non-lubricated threads), T     360 (40.06) in. lb. (m·N)

* Indicates Anode-to-case polarity, Cathode-to-case is standard polarity.

Electrical Specifications:
Parameter Symbol Test Conditions Rating Unit
Maximum Average Forward Current IF(AV) 180° sinusoidal condition, TC = +130°C Max 300 A
Maximum Peak One-Cycle Non-Repetitive Surge Current IFSM t = 10ms No voltage
reapplied
Sinusoidal half wave, Initial TJ = TJ max 6550 A
t = 8.3ms 6850 A
t = 10ms 100% VRRM
reapplied
5500 A
t = 8.3ms 5750 A
Maximum I2t for Fusing I2t t = 10ms No voltage
reapplied
Sinusoidal half wave, Initial TJ = TJ max 214000 A2s
t = 8.3ms 195000 A2s
Maximum I2t for Individual Device Fusing t = 10ms 100% VRRM
reapplied
151000 A2s
t = 8.3ms 138000 A2s
Maximum Value of Threshold Voltage VM(TO) TJ = +200°C 0.610 V
Maximum Value of Forward Slope Resistance rt TJ = +200°C 0.751 M Ohm

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