| Power Dissipation (Note 1), PD | 300mW | |
| RMS Emitter Current, IE(RMS) | 50mA | |
| Peak Pulse Emitter Current (Note 2) Current, iE | 2A | |
| Emitter Reverse Voltage, VB2E | 30V | |
| Interbase Voltage, VB2B1 | 35V | |
| Operating Junction Temperature Range, TJ | -65° to +125°C | |
| Storage Temperature Range, Tstg | -65° to +150°C |
| Note 1. | Derate 3mW/°C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Two) must be limited by the external circuitry. |
| Note 2. | Capacitor discharge - 10µF or less, 30V or less. |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Intrinsic Standoff Ratio | VB2B1 = 10V, Note 3 | 0.56 | - | 0.75 | - | |
| Interbase Resistance | rBB | VB2B1 = 3V, IE = 0 | 4.7 | 7.0 | 9.1 | k Ohms |
| Interbase Resistance Temperature Coefficient | 0.1 | - | 0.9 | %/°C | ||
| Emitter Saturation Voltage | VEB1(sat) | VB2B1 = 10V, IE = 50mA, Note 4 | - | 3.5 | - | V |
| Modulated Interbase Current | IB2(mod) | VB2B1 = 10V, IE = 50mA | - | 15 | - | mA |
| Emitter Reverse Current | IEB20 | VB2E = 30V, IB1 = 0 | - | 0.005 | 12 | µA |
| Peak Point Emitter Current | IP | VB2B1 = 25V | - | 1 | 5 | µA |
| Valley Point Current | IV | VB2B1 = 20V, RB2 = 100 Ohms | 4 | 6 | - | mA |
| Base-One Peak Pulse Voltage | VOB1 | 3 | 5 | - | V |
| Note 3. | Intrinsic standoff ratio is defined by the equation: VP - VF / VB2B1 where: VP = Peak Point Emitter Voltage; VB2B1 = Interbase Voltage; VF = Emitter to Base-One Junction Diode Drop (~0.45V @ 10µA) |
| Note 4. | Use pulse techniques: Pulse Width ~ 300µS, Duty Cycle </= 2% to avoid internal heating due to interbase modulation which may result in erroneous readings. |
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