NTE6415 thru NTE6419
Bidirectional Thyristor Diodes (SIDAC)

Description:

The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current of the device.

Features:

Applications:

  • High Voltage Lamp Ignitors
  • Natural Gas Ignitors
  • Gas Oil Ignitors
  • High Voltage Power Supplies
  • Xenon Ignitors
  • Overvoltage Protection
  • Pulse Generators
  • Fluorescent Lighting Ignitors

Absolute Maximum Ratings:
Peak Off Voltage, VDRM      
            NTE6415, NTE6416     45V
            NTE6417, NTE6418, NTE6419     90V
Effective Current (TA = +40°C, 50Hz, Sine Wave, Conducting Angle = 180°), IT     1A
Surge Current (50Hz, Non-Repeated 1 Cycle Sine Wave, Peak Value), ITSM     13A
Peak Current (TA = +40°C, Pulse Width = 10µs, f = 1kHz), ITRM     20A
Current Rise Rate, di/dt     50A/µs
Maximum Operating Junction Temperature, TJ     +125°C
Storage Temperature Range, Tstg     -30° to +125°C
Thermal Resistanxce, Junction-to-Case, RthJC     15°C/W
Lead temperature (During Soldering, 5mm from case, 5sec max), TL     +250°C

Electrical Characteristics: (TC = +25°C unless otherwisze specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Breakover Voltage NTE6415 VBO 50Hz Sine Wave, IB = 0 45 - 60 V
NTE6416 55 - 65 V
NTE6417 95 - 113 V
NTE6418 104 - 118 V
NTE6419 110 - 125 V
Peak Off Current IDRM 50Hz Sine Wave, V = Rated VDRM - - 10 µA
Breakover Current IBO 50Hz Sine Wave - - 0.5 mA
Holding Current IHold 50Hz Sine Wave - 50 - mA
ON Voltage VT IT = 1A - - 1.5 V
Switching Resistance RS 50Hz Sine Wave 1.0 - - k Ohm

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