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Worldwide supplier of high quality electrical / electronic components

Call Us: +800-631-1250

Optoelectronics

Phototransistor Detectors

NTE Type No.	Description	Collector to Base Voltage (Volts)	Maximum Collector Current (mA)	Maximum Collector Dark Current at +25°C (nA)	Minimum Light Current (mA)	Maximum Power Dissipation at +25°C (mW)	Typical Response Time (µs)	Package
		V_(BR)CBO	I_C	I_D	L_L	P_D
3031	NPN, Si, Visible and IR	30 (V_CEO)	40	100 @ 10V V_CE	1.0	150	6	TO46 Flat Lens
3032	NPN, Si, Visible and IR	80	40	20 @ 5V V_CE	12	200	2	TO46 Dome Lens
3034A	NPN, Si, Photo/Light Detector	30 (V_CEO)	50	50 @ 20V V_CE	-	100	-	Sidelooker
3036	NPN, Si, Darlington Visible & Near IR	50	250	100	12	250	151	TO18 Dome Lens
3037	NPN, Si, Visible and IR	50	50	200 @ 30V V_CE	60µA @ 3V	150	2	TO18 Dome Lens
3039	NPN, Si, Visible and IR	30	-	100 @ 15V V_CE	7µA @ 5V	70	-	3mm (T1) clear
3120A	NPN, Si, Phototransistor	30 (V_CEO)	50	1µA @ 20V V_CE	-	100	10	Sidelooker
3122	NPN, Si, Darlington, IR, Visible Cut-Off, Narrow Acceptance	35 (V_CEO)	50	10µA @ 10V V_CE	1.5	75	80
3123	NPN, Si, Darlington, IR, Visible Cut-Off	35 (V_CEO)	50	10µA @ 10V V_CE	0.2	75	400
30051	NPN, Si, Phototransistor	30 (V_CEO)	1.5 Typ	30	-	150	15	-
30052	NPN, Si, Phototransistor	30 (V_CEO)	12	30	-	150	15	-
30133	NPN, Si, IR Phototransistor (use with NTE30132)	30 (V_CEO)	20	100	-	75	15	1.9mm Dome Lens

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