| Collector-Base Voltage, VCBO | 120V |
| Collector-Emitter Voltage, VCEO | 120V |
| Collector Current, IC DC Pulse |
12A 15A |
| Base Current, IB | 200mA |
| Collector Dissipation (TC = +25°C), PC | 80W |
| Operating Junction Temperature, TJ | +150°C |
| Storage Temperature Range, Tstg | -65° to +150°C |
| Thermal Resistance, Junction-to-Case, RthJC | 1.65°C/W |
Electrical Characteristics: (TA = +25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Emitter Sustaining Voltage | VCEO(sus) | IC = 100mA, IB = 0, Note 1 | 100 | - | - | V |
| Collector Cutoff Current | ICBO | VCB = 100V, IE = 0 | - | - | 100 | µA |
| ICEO | VCE = 100V, IB = 0 | - | - | 1 | mA | |
| Emitter Cutoff Current | IEBO | VEB = 5V, IC = 0 | - | - | 2 | mA |
| DC Current Gain | hFE | IC = 3A, VCE = 3V | 1000 | - | - | |
| IC = 5A, VCE = 3V | 750 | - | 1000 | |||
| IC = 10A, VCE = 3V | 100 | - | - | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 5A, IB = 20mA, Note 1 | - | - | 2.0 | V |
| IC = 10A, IB = 100mA, Note 1 | - | - | 3.0 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC = 5A, IB = 20mA, Note 1 | - | - | 2.5 | V |
| IC = 10A, IB = 100mA, Note 1 | - | - | 4.0 | V | ||
| Parallel Diode Forward Voltage | Vf | If = 5A, Note 1 | - | 1.3 | 2.0 | V |
| If = 10A, Note 1 | - | 1.8 | 4.0 | V | ||
| Small-Signal Current Gain | hfr | IC = 1A, VCE = 10V, f = 1MHz | 20 | - | - |
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
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