NTE3120
Silicon NPN Phototransistor Detector

Features:

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)                   
Collector-Emitter Voltage, VCEO 20V
Emitter-Collector Voltage, VECO 5V
Collector Current, IC 20mA
Collector Dissipation, PC 100mW
Operating Temperature Range, Topr -25° to +85°C
Storage Temperature Range, Tstg -30° to +100°C

Electro-Optical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dark Current ICEO VCE = 10V - 0.01 1.0 µA
Photo Current Current ICE(L) VCE = 10V, L = 500 1x, Note 1 1 3 - mA
Peak Sensitivity Wavelength   VCE = 10V - 800 - nm
Acceptance Half Angle   Note 2 - 32 - deg
Rise Time tr ICE(L) = 5mA, VCC = 10V, RL = 100 Ohms - 4 10 µs
Fall Time tf - 4 10 µs
Collector-Emitter Saturation VOltage VCE(sat) ICE(L) = 1mA, L = 1000 1x, Note 1 - - 0.4 V

Note 1.Source:  Tungsten 2856 °K.
Note 2.The angle when the light current is halved.

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