| Non-Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRSOM | 700V |
| Non-Repetitive Peak Off-State Voltage (Gate Open, Note 1), VDSOM | 700V |
| Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRROM | 600V |
| Repetitive Peak Off-State Voltage (Gate Open, Note 1, VDROM | 600V |
| RMS On-State Current (TC = +60°C, 180° conduction angle), IT(RMS) | 5.0A |
| Average On-State Current (TC = +60°C, 180° conduction angle), IT(AV) | 3.2A |
| Peak Surge (Non-Repetitive) On-State Current (TC = +60°C, for one full at cycle applied voltage), ITSM 60Hz (Sinusoidal) 50Hz (Sinusoidal) |
80A 65A |
| rate of Change of On-State Current (VD = 600V, IGT = 50mA, t = 1 to 8.3ms), di/dt | 200A/µs |
| Fusing Current (TJ = -40° to +100°C, t = 1 to 8.3ms), I2t | 25A |
| Peak Forward Gate Power Dissipation (10µs Max, Note 2), PGM | 3W |
| Peak Reverse Gate Power Dissipation (10µs Max, Note 2), PRGM | 3W |
| Average Gate Power Dissipation (10µs Max, Note 2), PG(AV) | 0.5W |
| Operating Case Temperature Range, TC | -40° to +100°C |
| Storage Temperature Range, Tstg | -40° to +150°C |
| Thermal Resistance, Junction-to-Case, RthJC | 8°C/W |
| Thermal Resistance, Junction-to-Ambient, RthJA | 40°C/W |
| Lead Temperature (During Soldering, 1/32" from seating plane, 10sec max), TL | +225°C |
Note 1. Thses values do not apply if there is a positive gate signal. Gate must be negatively biased.
Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted.
Electrical Characteristics: (At "Maximum Ratings" and TC = +25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Peak Off-State Forward Current | IDOM | VD = 600V, TC = +100°C, Gate Open | - | 0.5 | 3.0 | mA |
| Peak Off-State Reverse Current | IROM | VD = 600V, TC = +100°C, Gate Open | - | 0.3 | 1.5 | mA |
| Instantaneous On-State Voltage | vT | iT = 30A Peak | - | 2.2 | 3.0 | V |
| Instantaneous Holding Current | iHO | Gate Open | - | 20 | 50 | mA |
| Critical Rate of Rise of Off-State Current | dv/dt | VD = 600V, exponential voltage rise, TC = +80°C, Gate Open | 100 | 250 | - | V / µs |
| DC Gate Trigger Current | IGT | VD = 12V, RL = 30 Ohm | - | 15 | 40 | mA |
| DC Gate Trigger Voltage | VGT | VD = 12V, RL = 30 Ohm | - | 1.8 | 3.5 | V |
| Gate Controlled Turn-On Time | tgt | VDX = 600V, IGT = 300mA, tr = 0.1µs, IT = 2A Peak | - | 0.7 | - | µs |
| Circuit Commutated Turn-Off Time | tq | VDX = 600V, iT = 2A, pulse duration = 50µs, dv/dt = 100V/µs, -di/dt = -10A/µs, IGT = 100mA, VGT = 0V (at turn-off), TC = +80°C | - | 4 | 6 | µs |
