NTE6032 & NTE6033
Silicon Power Rectifier Diode
40 Amp

Features:

Ratings and Characteristics:
Average Forward Current (TC = +75°C Max), IF(AV) 40A
Maximum Repetitive Peak Reverse Voltage (TJ = -40° to +125°C), VRRM 1000V
Maximum Non-Repetitive Peak Reverse Voltage, VRRM
            (TJ = +25° to +125°C, tp </= 5ms)
1250V
Maximum Reverse Current (At Rated VR), IR
            TJ = +25°C
            TJ = +125°C
0.1mA
10mA
Maximum Forward Surge Current, IFSM
            50Hz
            60Hz
700A
730A
Fusing Current (50Hz), I2t 2450A2s
Fusing Current (60Hz), I2t 2200A2s
Operating Junction Temperature Range, TJ -40° to +125°C
Storage Temperature Range, Tstg -40° to +150°C
Thermal Resistance, Junction-to-Case (DC Operation), RthJC 0.6°C/W
Thermal Resistance, Case-to-Sink (Surface flat, smooth, and greased), RthCS 0.25°C/W
Maximum Mounting Torque (Non-lubricated threads), T 30 (3.3 in·lb (m·N)

Electrical Specifications:
Parameter Symbol Test Conditions Rating Unit
Maximum Average Forward Current IF(AV) 180° sinusoidal condition, TC = +75°C Max 40 A
Maximum Peak One-Cycle Non-Repetitive Surge Current IFSM t = 10ms Half sinewave current, rated VRRM reapplied, initial TJ = +125°C 400 A
t = 8.3ms 420 A
t = 10ms Half sinewave current, no voltage reapplied, initial TJ = +125°C 475 A
t = 8.3ms 500 A
Maximum I2t for Fusing I2t t = 10ms Rated VRRM reapplied, initial TJ = +125°C 800 A2s
t = 8.3ms 730 A2s
Maximum I2t for Individual Device Fusing t = 10ms No voltage reapplied, initial TJ = +125°C 1150 A2s
t = 8.3ms 1050 A2s
Maximum Peak Forward Voltage VFM TJ = +25°C, IFM = 125A 1.95 V
Maximum Reverse Recovery Time trr TJ = +25°C, IF = 1A to VR = 30V, -dIF/dt = 100A/µs 350 ns
TJ = +25°C, IF = 125A, -dIF/dt = 25A/µs 1000 ns
Maximum Reverse Recovery Charge trr TJ = +25°C, IF = 1A to VR = 30V, -dIF/dt = 100A/µs 3100 ns
TJ = +25°C, IF = 125A, -dIF/dt = 25A/µs 6000 ns

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