NTE6082
Silicon Schottky Barrier Rectifier

Description:

The NTE6082 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal.

Features:

Maximum and Electrical Ratings: (TA = +25°C unless otherwise specified. Resistive or inductive load.
For capacitive or inductive load, derate current by 20%.)
Maximum Peak Repetitive Reverse Voltage, VRRM 60V
Maximum Working Peak Reverse Voltage, VRWM 60V
Maximum DC Blocking Voltage, VR 60V
Maximum Average Rectified Forward Current (TC = +125°C Max), IF(AV) 16A
Peak Repetitive Forward Current, IFRM
            (VR = 60V, Square Wave, 20kHz, TC = +125°C Max)
32A
Non-Repetitive Peak Surge Current, IFSM
            (8.3ms single half sinewave superimposed on rated load)
150A
Peak Repetitive Reverse Surge Current (2.0µs, 1.0kHz), IRRM 500mA
Maximum Forward Surge Current, IFSM
            50Hz
            60Hz
700A
730A
Operating Junction Temperature Range, TJ -65° to +150°C
Storage Temperature Range, Tstg -65° to +150°C
Voltage Rate of Change (VR = 60V), dv/dt 1000V/µs
Maximum Thermal Resistance, Junction-to-Case, RthJC 3°C/W
Maximum Instantaneous Forward Voltage (Per Leg, IF = 16A), VF  
            TC = +125°C (Note 1) 0.65V
            TC = +25°C 0.75V
Maximum Instantaneous Reverse Current (Rated DC Voltage), IR  
            TC = +125°C 50mA
            TC = +25°C 1mA

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle </= 2%.

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