NTE6084
Silicon Schottky Barrier Rectifier

Description:

The NTE6084 is a silicon power rectifier in a DO4 type package designed using the Schottky Barrier principle with a platinum barrier metal.

Features:

Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM 45V
Working Peak Reverse Voltage, VRWM 35V
DC Blocking Voltage, VR 45V
Average Rectified Forward Current (VR = 45V, TC = +105°C Max), IF(AV) 30A
Non-Repetitive Peak Surge Current, IFSM
            (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz)
600A
Peak Repetitive Reverse Current (2µs, 1kHz), IRRM 2A
Voltage Rate of Change (VR = 45V), dv/dt 700V/µs
Peak Operating Junction Temperature (Forward Current Applied), TJ(pk)/SUB> +150°C
Operating Junction Temperature Range, TJ -55° to +150°C
Storage Temperature Range, Tstg -55° to +150°C
Maximum Thermal Resistance, Junction-to-Case, RthJC 2°C/W

Electrical Characteristics (Per Diode Leg): (Note 1)
Parameter Symbol Test Conditions Min Typ Max Unit
Instantaneous Forward Voltage vF iF = 30A, TC = +125°C, Note 1 - - 0.55 V
Instantaneous Reverse Current iR VR = 35V, TC = +125°C, Note 1 - - 125 mA
Capacitance Ct VR = 5V, f = 100kHz to 1MHz - - 2000 pF

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle </= 2%.

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