NTE6086
Silicon Dual Schottky Rectifier

Description:

The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal.

Features:

Absolute Maximum Ratings (Per Diode Leg):
Peak Repetitive Reverse Voltage, VRRM 100V
Working Peak Reverse Voltage, VRWM 100V
DC Blocking Voltage, VR 100V
Average Rectified Forward Current (VR = 100V, TC = +133°C Max), IF(AV) 10A
Peak Repetitive Forward Current, IFRM
            (VR = 100V, Square Wave, 20kHz, TC = +133°C Max)
20A
Non-Repetitive Peak Surge Current, IFSM
            (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz)
150A
Peak Repetitive Reverse Current (2µs, 1kHz), IRRM 0.5A
Operating Junction Temperature Range, TJ -65° to +150°C
Storage Temperature Range, Tstg -65° to +175°C
Voltage Rate of Change (VR = 100V), dv/dt 1000V/µs
Maximum Thermal Resistance, Junction-to-Case, RthJC 2°C/W
Maximum Thermal Resistance, Junction-to-Ambient, RthJA 60°C/W

Electrical Characteristics (Per Diode Leg): (Note 1)
Parameter Symbol Test Conditions Min Typ Max Unit
Instantaneous Forward Voltage vF iF = 10A, TC = +125°C - - 0.70 V
iF = 10A, TC = +25°C - - 0.80 V
iF = 20A, TC = +125°C - - 0.85 V
iF = 20A, TC = +25°C - - 0.95 V
Instantaneous Reverse Current iR VR = 100V, TC = +125°C - - 150 mA
VR = 100V, TC = +25°C - - 0.15 mA

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle </= 2%.

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