NTE6088
Silicon Dual Schottky Rectifier

Description:

The NTE6088 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal.

Features:

Maximum and Electrical Ratings: (TA = +25°C unless otherwise specified. Resistive or inductive load.
For capacitive or inductive load, derate current by 20%.)
Maximum Recurrent Peak Reverse Voltage, VRRM 60V
Maximum Working Peak Reverse Voltage, VRWM 60V
Maximum DC Blocking Voltage, VR 60V
Maximum Average Rectified Forward Current (TC = +125°C Max), IF(AV) 30A
Peak Repetitive Forward Current (Per Leg), IFRM
            (VR = 60V, Square Wave, 20kHz, TC = +125°C Max)		 30A
Peak Forward Surge Current, IFSM
            (8.3ms single half sine wave superimposed on rated load)		 150A
Peak Repetitive Reverse Current (2µs, 1kHz), IRRM 0.5A
Operating Junction Temperature Range, TJ -65° to +150°C
Storage Temperature Range, Tstg -65° to +175°C
Voltage Rate of Change (VR = 60V), dv/dt 1000V/µs
Maximum Thermal Resistance, Junction-to-Case (Per Leg), RthJC 1.5°C/W
Maximum Thermal Resistance, Junction-to-Ambient, RthJA 60°C/W
Maximum Instantaneous Forward Voltage (Per Leg, IF = 15A), VF  
            TC = +125°C (Note 1) 0.65V
            TC = +25°C 0.75V
Maximum Instantaneous Reverse Current (Rated DC Voltage), IR  
            TC = +125°C (Note 1) 50mA
            TC = +25°C 1mA

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle </= 2%.

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