NTE6093
Silicon Rectifier
Dual, Schottky Barrier

Description:

The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle with a Molybenum barrier metal.

Features:

Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM     60V
Working Peak Reverse Voltage, VRWM     60V
DC Blocking Voltage, VR     60V
RMS Reverse Voltage, VR(RMS)     42V
Average Rectifier Forward Current (VR = 60V, TC = +125°C), IF(AV)
            Per Diode
            Total Device		     30A
60A
Peak Repetitive Forward Current (VR = 60V, Square Wave, TC = +125°C), IFM     60A
Non-Repetitive Peak Surge Current, IFSM      
            (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz)     600A
Operating Junction Temperature Range, TJ     -65° to +125°C
Storage Temperature Range, Tstg     -65° to +125°C

Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Instantaneous Forward Voltage VF IF = 30A, TC = +25°C - - 0.63 V
IF = 30A, TC = +125°C - - 0.75 V
Instantaneous Reverse Current IR VR = 60V, TC = +25°C - - 10 µA
VR = 60V, TC = +100°C - - 150 µA

  Home  Back