NTE6400 & NTE6400A
Unijunction Transistor (UJT)

Description:

The NTE6400 and NTE6400A Silicon Unijunction Transistors are therr terminal devices having a stable "N" type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse current make these devices useful in oscillators, timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conventional silicon or germanium transistors.

These devices are intended for applications where circuit economy is of primary importance.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
RMS Power Dissipation, PD      
            Unstabilized     450mW
            Stabilized     600mW
                  Derate Above 25°C     3.9mW/°C
RMS Emitter Current, IE     50mA
Peak Emitter Current (TJ = +150°C), IE(peak)     2A
Emitter Reverse Voltage (TJ = +150°C)     60V
Interbase Voltage, VBB      
            NTE6400     35V
            NTE6400A     55V
Operating Temperature Range, TJ      
            Unstabilized     -65° to +140°C
            Stabilized     -65° to +175°C
Storage Temperature Range, Tstg     -65° to +175°C
Thermal Resistance, Junction-to-Case, RthJC     0.16°C/mW

Electrical Characteristics: (TA = +25°C unless otherwisze specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Intrinsic Standoff Ratio NTE6400   VBB = 10V, Note 1 0.45 - 0.80 -
NTE6400A 0.54 - 0.67 -
Interbase Resistance RBBO VBB = 3V, IE = 0, Note 1 4 - 12 k Ohms
Modulated Interbase Current IB2(mod) VBB = 10V, IE = 50mA 6.8 - 30 mA
Emitter Reverse Current NTE6400 IEO VB2E = 30V, IB1 = 0 - - 12 µA
NTE6400A - - 1.0 µA
Peak Point Emitter Current IP VBB = 25V - - 25 µA
Valley Point Current IV VBB = 20V, RB2 = 100 Ohms 8 - - mA
Base-One Peak Pulse Voltage VOB1   3 - - V

Note 1.Intrinsic standoff ratio is essentially constant with temperature and interbase voltage. It is defined by the equation:

            VP = Intrinsic Standoff Ratio VBB + 200 / TJ

where: VP = Peak Point Emitter Voltage
where: VBB = Interbase Voltage
where: TJ = Junction Temperature (Degrees Kelvin)

Note 2.The interbase resistance is nearly ohmic and increases with temperature in a well-defined manner. The temperature coefficient at +25°C is approximately 0.8%/°C.

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