These devices are intended for applications where circuit economy is of primary importance.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
RMS Power Dissipation, PD | ||
Unstabilized | 450mW | |
Stabilized | 600mW | |
Derate Above 25°C | 3.9mW/°C | |
RMS Emitter Current, IE | 50mA | |
Peak Emitter Current (TJ = +150°C), IE(peak) | 2A | |
Emitter Reverse Voltage (TJ = +150°C) | 60V | |
Interbase Voltage, VBB | ||
NTE6400 | 35V | |
NTE6400A | 55V | |
Operating Temperature Range, TJ | ||
Unstabilized | -65° to +140°C | |
Stabilized | -65° to +175°C | |
Storage Temperature Range, Tstg | -65° to +175°C | |
Thermal Resistance, Junction-to-Case, RthJC | 0.16°C/mW |
Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | |
Intrinsic Standoff Ratio | NTE6400 | VBB = 10V, Note 1 | 0.45 | - | 0.80 | - | |
NTE6400A | 0.54 | - | 0.67 | - | |||
Interbase Resistance | RBBO | VBB = 3V, IE = 0, Note 1 | 4 | - | 12 | k Ohms | |
Modulated Interbase Current | IB2(mod) | VBB = 10V, IE = 50mA | 6.8 | - | 30 | mA | |
Emitter Reverse Current | NTE6400 | IEO | VB2E = 30V, IB1 = 0 | - | - | 12 | µA |
NTE6400A | - | - | 1.0 | µA | |||
Peak Point Emitter Current | IP | VBB = 25V | - | - | 25 | µA | |
Valley Point Current | IV | VBB = 20V, RB2 = 100 Ohms | 8 | - | - | mA | |
Base-One Peak Pulse Voltage | VOB1 | 3 | - | - | V |
Note 1. | Intrinsic standoff ratio is essentially constant with temperature and interbase voltage. It is defined by the equation: VP = Intrinsic Standoff Ratio VBB + 200 / TJ where: VP = Peak Point Emitter Voltage |
Note 2. | The interbase resistance is nearly ohmic and increases with temperature in a well-defined manner. The temperature coefficient at +25°C is approximately 0.8%/°C. |
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