This device has been characterized as a Programmable Unijunction Transistor (PUT), offering many advantages over conventional unijunction transistors. The designer can select R1 and R2 to program unijunction characteristics such as intrinsic standoff ratio, interbase resistance, peak-point emitter current, and valley-point current to meet his particular needs.
PUT's are specifically characterized for long interval timers and other applications requiring low leakage and low peak point current.
Gate-Cathode Forward Voltage | +40V | |
Gate-Cathode Reverse Voltage | -5V | |
Gate-Anode Reverse Voltage | +40V | |
Anode-Cathode Voltage | ±40V | |
DC Anode Current (Note 1) | 150mA | |
Peak Anode Recurrent Forward Current | ||
Pulse Width = 100µs, Duty Cycle = 1% | 1A | |
Pulse Width = 20µs, Duty Cycle = 1% | 2A | |
Peak Anode, Non-Recurrent Forward Current (10µs) | ±20mA | |
Capacitive Discharge Energy (Note 2) | 250µJ | |
Total Average Power (Note 1) | 300mW | |
Operating Ambient Temperature Range (Note 1) | -50° to +100°C |
Note 1. | Derate current and powers 1%/°C above 25°C. |
Note 2. | E = 1/2 CV2 capacitor discharge energy with no current limiting. |
Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
Peak Current | IP | VS = 10V, RG = 1M Ohm | - | - | 2 | µA |
VS = 10V, RG = 10k Ohm | - | - | 5 | µA | ||
Offset Voltage | VT | VS = 10V, RG = 1M Ohm | 0.2 | - | 1.6 | V |
VS = 10V, RG = 10k Ohm | 0.2 | - | 0.6 | V | ||
Valley Current | IV | VS = 10V, RG = 1M Ohm | - | - | 50 | µA |
VS = 10V, RG = 10k Ohm | 70 | - | - | µA | ||
VS = 10V, RG = 200 Ohm | 1.5 | - | - | mA | ||
Anode Gate-Anode Leakage Current | IGAO | VS = 40V, TA = +25°C | - | - | 10 | nA |
VS = 40V, TA = +75°C | - | - | 100 | nA | ||
Gate-Cathode Leakage Current | IGKS | VS = 40V, Anode-Cathode Short | - | - | 100 | nA |
Forward Voltage | VF | IF = 50mA | - | - | 1.5 | V |
Pulse Output Voltage | VO | 6 | - | - | V | |
Pulse Voltage Rate of Rise | tr | - | - | 80 | ns |
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