NTE6402
Programmable Unijunction Transistor (PUT)

Description:

The NTE6402 is a 3-terminal silicon planer passivasted PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and cathode.

This device has been characterized as a Programmable Unijunction Transistor (PUT), offering many advantages over conventional unijunction transistors. The designer can select R1 and R2 to program unijunction characteristics such as intrinsic standoff ratio, interbase resistance, peak-point emitter current, and valley-point current to meet his particular needs.

PUT's are specifically characterized for long interval timers and other applications requiring low leakage and low peak point current.

Applications:

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Gate-Cathode Forward Voltage     +40V
Gate-Cathode Reverse Voltage     -5V
Gate-Anode Reverse Voltage     +40V
Anode-Cathode Voltage     ±40V
DC Anode Current (Note 1)     150mA
Peak Anode Recurrent Forward Current      
            Pulse Width = 100µs, Duty Cycle = 1%     1A
            Pulse Width = 20µs, Duty Cycle = 1%     2A
Peak Anode, Non-Recurrent Forward Current (10µs)     ±20mA
Capacitive Discharge Energy (Note 2)     250µJ
Total Average Power (Note 1)     300mW
Operating Ambient Temperature Range (Note 1)     -50° to +100°C

Note 1.Derate current and powers 1%/°C above 25°C.
Note 2.E = 1/2 CV2 capacitor discharge energy with no current limiting.

Electrical Characteristics: (TA = +25°C unless otherwisze specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Current IP VS = 10V, RG = 1M Ohm - - 2 µA
VS = 10V, RG = 10k Ohm - - 5 µA
Offset Voltage VT VS = 10V, RG = 1M Ohm 0.2 - 1.6 V
VS = 10V, RG = 10k Ohm 0.2 - 0.6 V
Valley Current IV VS = 10V, RG = 1M Ohm - - 50 µA
VS = 10V, RG = 10k Ohm 70 - - µA
VS = 10V, RG = 200 Ohm 1.5 - - mA
Anode Gate-Anode Leakage Current IGAO VS = 40V, TA = +25°C - - 10 nA
VS = 40V, TA = +75°C - - 100 nA
Gate-Cathode Leakage Current IGKS VS = 40V, Anode-Cathode Short - - 100 nA
Forward Voltage VF IF = 50mA - - 1.5 V
Pulse Output Voltage VO   6 - - V
Pulse Voltage Rate of Rise tr   - - 80 ns

TO92TO98

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