NTE6403
Silicon Bilateral Switch (SBS)

Description:

The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8V with a 0.02%/°C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminate rate effect and to obtain triggering at lower voltages.

The NTE6403 is specifically designed and characterized for applications where stability of switching voltage over a wide temperature range and well matched bilateral characteristicas are an asset. It is ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control cuicits.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Peak Recurrent Forward Current (PW = 10µs, Duty Cycle = 1%)     1A
Peak Non-Recurrent Forward Current (PW = 10µs)     5A
Power Dissipation (Note 1)     300mW
DC Forward Anode Current (Note 1)     175mA
DC Gate Current (Note 1, Note 2)     5mA
Operating Junction Temperature Range     -55° to +125°C
Storage Temperature Range     -65° to +150°C

Note 1.Derate linearly to zero at +125°C.
Note 2.This rating applicable only on OFF state. Maximum gate current in conducting state limited by maximum power rating.

Electrical Characteristics: (TA = +25°C, Note 3 unless otherwisze specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Switching Voltage VS   7.5 - 9.0 V
Switching Current IS   - - 120 µA
Absolute Switching Voltage Difference |VS2 - VS1|   - - 200 mV
Absolute Switching Current Difference |IS2 - IS1|   - - 10 µA
Holding Current IH   - - 0.5 mA
OFF-State Current IB VF = 5V, TA = +25°C - - 0.1 µA
VF = 5V, TA = +85°C - - 10 µA
Temperature Coefficient of Switching Voltage TC TA = -55° to +85°C - ±0.05 - % / °C
ON-State Forward Voltage Drop VF IF = 175mA - - 1.7 V
Forward Gate Current to Trigger IGF VF = 5V, RL = 1k Ohm - - 100 µA
Dynamic Characteristics
Peak Pulse Amplitude Vo   3.5 - - V
Turn-On Time ton   - - 1.0 µs
Turn-Off Time toff   - - 30 µs

Note 3.This device is a symmetrical negative resistance diode. All electrical limints shown above apply in either direction of current flow.

TO92TO98

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