NTE6404
Silicon Unilateral Switch (SUS)

Description:

The NTE6404 is a silicon planer, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four layer diode. The device is designed to switch at 8V with a 0.02%/°C temperature coefficient. A gate lead is provided to eliminate rate effect, obtain triggering at lower values and to obtain transient free waveforms.

Silicon Unilateral Switches are specifically designed and caharcterized for use in monostable and bistable applications where low cost is of prime importance.

Applications:

Absolute Maximum Ratings:
Power Dissipation (Note 1)     300mW
Peak Reverse Voltage     -30V
DC Forward Anode Current (Note 1)     175mA
DC Gate Current (Note 1, Note 2)     5mA
Peak Recurrent Forward Current (PW = 10µs, Duty Cycle = 1%, TA = +100°C)     1A
Peak Non-Recurrent Forward Current (PW = 10µs)     5A
Operating Junction Temperature Range     -55° to +125°C
Storage Temperature Range     -65° to +150°C

Note 1.Derate linearly to zero at +125°C.
Note 2.This rating applicable only on OFF state. Maximum gate current in conducting state limited by maximum power rating.

Electrical Characteristics: (TA = +25°C unless otherwisze specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Forward Switching Voltage VS   7 - 9 V
Forward Switching Current IS   - - 200 µA
Holding Current IH   - - 0.75 mA
Reverse Current IR VR = -30V, TA = +25°C - - 0.1 µA
VR = -30V, TA = +100°C - - 10 µA
OFF-State Current IB VF = 5V, TA = +25°C - - 0.1 µA
VF = 5V, TA = +85°C - - 10 µA
ON-State Forward Voltage Drop VF IF = 175mA - - 1.5 V
Temperature Coefficient of Switching Voltage TC TA = -55° to +100°C - ±0.02 - % / °C
Dynamic Characteristics
Turn-On Time ton   - - 1.0 µs
Turn-Off Time toff   - - 25 µs
Capacitance C f = 1MHz - 2.5 - pF

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