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Call Us: +800-631-1250

 

Transistors

Darlington Transistor Selection Guide

In electronics, the Darlington configuration is a compound structure of a particular design made by two bipolar transistors connected in such a way that the current amplified by the first transistor is amplified further by the second one. This configuration gives a much higher current gain than each transistor taken separately. Invented in 1953 by Sidney Darlington.

(Listed in Order of Case Style descending Voltage, *TC = +25°C)

  • NTE Type No. Maximum
    Continuous
    Collector
    Current

    (Amps)
    Maximum Breakdown Voltage Maximum
    Continuous
    Base
    Current

    (mA)
    Typical
    Forward
    Current
    Gain
    Maximum
    Collector
    Power
    Dissipation

    (Watts)
    Case
    Style
    NPN PNP Collector
    to Base

    (Volts)
    Collector
    to Emitter

    (Volts)
    Emitter
    to Base

    (Volts)
    IC BVCBO BVCEO BVEBO IB hFE PD
    98 - 20 700 (CEV) 500 8 2500 40 Min 175 * TO3
    TO3
    99 - 50 600 400 8 10000 25 Min 250
    97 - 10 500 400 8 2500 40 Min 150
    2649 2650 15 200 200 5 1A 5000 Min 130 *
    2349 2350 50 120 120 5 2A 2000 Min 300
    2541 2542 25 120 120 (CER) 6 2A 2000 Min 120 *
    247 248 12 100 100 5 200 750 Min 150 *
    249 250 16 100 100 5 500 4000 150
    251 252 20 100 100 5 500 2500 160
    243 244 8 80 80 5 120 2500 100
    245 246 10 80 80 5 200 4000 150
    2335 - 5 60±15 60±15 6 - 2000 Min 80
    215 - 8 110 100 6 - 4000 60 TO3P
    TO3P
    214 - 10 70 60 6 - 5000 2.5
    2682 2683 8 160 160 5 - 3500 Min 150 * TO3PL
    TO3PL
    2558 - 15 1500 800 5 3A 25 Min 250 * TO3PBL
    TO3PBL
    2685 2686 8 160 150 5 1A 5000 Min 75 * TO3PML
    TO3PML
    2559 2560 16 120 120 6 1A 2000 Min 75 *
    274 275 4 80 80 5 80 3000 50 TO66
    TO66
  • (Listed in Order of Case Style descending Voltage, *TC = +25°C)

    NTE Type No. Maximum
    Continuous
    Collector
    Current

    (Amps)
    Maximum Breakdown Voltage Maximum
    Continuous
    Base
    Current

    (mA)
    Typical
    Forward
    Current
    Gain
    Maximum
    Collector
    Power
    Dissipation

    (Watts)
    Case
    Style
    NPN PNP Collector
    to Base

    (Volts)
    Collector
    to Emitter

    (Volts)
    Emitter
    to Base

    (Volts)
    IC BVCBO BVCEO BVEBO IB hFE PD
    272 - 2 50 40 12 - 25000 Min 10 * TO202
    TO202
    265 - 0.5 50 (CES) 50 13 75 10000 Min 6.25 *
    256 - 28 600 400 10 6A 30 Min 150 TO218
    TO218
    2317 - 15 500 450 5 1A 300 Min 105 *
    270 271 10 100 100 5 500 1000 Min 125 TO218TO218/TO3P
    TO218/TO3P
    2638 - 7 400 400 6 1.5A 150 Min 80 * TO220
    TO220
    2315 - 8 400 200 6 2A 125 60
    2343 2344 12 120 120 5 200 1000 Min 80
    261 262 8 100 100 5 120 1000 Min 65
    263 264 10 100 100 5 250 1000 Min 65
    2545 2546 5 70 60 5 - 2000 Min 30 *
    2332 - 2 60±10 60±10 6 2 4000 20
    2334 - 5 60±10 60±10 6 500 4000 40
    266 - 0.5 50 50 13 - 40000 Min 6.25
    268 269 2 50 50 13 100 1000 Min 10
    267 - 0.5 30 30 13 - 90000 Min 6.25
    2540 - 6 600 400 5 1A 600 Min 25 * TO220 Full Pack
    TO220 Full Pack
    2543 - 6 300 250 (CER) 20 6A 2000 Min 40 *
    2553 - 12 300 200 6 1A 500 Min 30 *
    2547 2548 8 110 100 6 - 4000 30 * / 20 *
    2551 2552 10 70 60 6 - 5000 30 *
    2693 2694 6 110 110 5 1A 5000 Min 30 * TO220 Full Pack
    TO220 Full Pack
    2557 - 15 200 200 7 1A 1500 Min 100 * TO247
    TO247
  • (Listed in Order of Case Style descending Voltage, *TC = +25°C)

    NTE Type No. Maximum
    Continuous
    Collector
    Current

    (Amps)
    Maximum Breakdown Voltage Maximum
    Continuous
    Base
    Current

    (mA)
    Typical
    Forward
    Current
    Gain
    Maximum
    Collector
    Power
    Dissipation

    (Watts)
    Case
    Style
    NPN PNP Collector
    to Base

    (Volts)
    Collector
    to Emitter

    (Volts)
    Emitter
    to Base

    (Volts)
    IC BVCBO BVCEO BVEBO IB hFE PD
    - 17 0.5 100 100 12 - 10000 0.625 TO92
    TO92
    46 - 0.5 100 100 12 - 10000 0.625
    2341 2342 1 100 80 7 100 2000 Min 1
    172A - 0.3 40 40 12 50 7000 Min 0.4
    48 - 1 60 50 (CES) 12 - 25000 Min 1 Giant T092
    Giant TO92
    2644 - 2 60±10 60±1 8 500 2000 Min 0.9
    2544 - 1.5 120 120 6 - 1000 Min 10 * TO126
    TO126
    253 254 4 80 80 5 100 2000 40 *
    2554 2555 7 70 60 6 - 1500 Min 40 *
    2345 2346 6 120 120 5 150 750 Min 60 SOT-82
    SOT-82
    2404 2405 0.3 40 30 10 100 4000 Min 0.350 SOT-23
    SOT-23
    2426 2427 0.5 90 80 (CER) 5 100 2000 Min 1 SOT-89
    SOT-89
    2340 - 8 60±10 60±10 7 - 2000 Min 45 N Pack
    N Pack
    2351 2352 4 100 80 5 0.4 1000 Min 1
    2556 - 8 110 100 6 - 1500 Min 40 * Silicon NPN Transistor
    2550 - 10 500 400 12 0.5 150 Min 50 * Silicon NPN Transistor