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Call Us: +800-631-1250

 

Transistors

Darlington Transistor Selection Guide

In electronics, the Darlington configuration is a compound structure of a particular design made by two bipolar transistors connected in such a way that the current amplified by the first transistor is amplified further by the second one. This configuration gives a much higher current gain than each transistor taken separately. Invented in 1953 by Sidney Darlington.


(Listed in Order of Case Style descending Voltage, *TC = +25°C)

NTE Type No. Maximum
Continuous
Collector
Current
(Amps)
Maximum Breakdown Voltage Maximum
Continuous
Base
Current
(mA)
Typical
Forward
Current
Gain
Maximum
Collector
Power
Dissipation
(Watts)
Case Style
(hover over image for larger view)
NPN PNP Collector
to Base
(Volts)
Collector
to Emitter
(Volts)
Emitter
to Base
(Volts)
IC BVCBO BVCEO BVEBO IB hFE PD
98 - 20 700 (CEV) 500 8 2500 40 Min 175 * TO3TO3
TO3

TO3
99 - 50 600 400 8 10000 25 Min 250
97 - 10 500 400 8 2500 40 Min 150
2649 2650 15 200 200 5 1A 5000 Min 130 *
2349 2350 50 120 120 5 2A 2000 Min 300
2541 2542 25 120 120 (CER) 6 2A 2000 Min 120 *
247 248 12 100 100 5 200 750 Min 150 *
249 250 16 100 100 5 500 4000 150
251 252 20 100 100 5 500 2500 160
243 244 8 80 80 5 120 2500 100
245 246 10 80 80 5 200 4000 150
2335 - 5 60±15 60±15 6 - 2000 Min 80
215 - 8 110 100 6 - 4000 60 TO3PTO3P
TO3P

TO3P
214 - 10 70 60 6 - 5000 2.5
2682 2683 8 160 160 5 - 3500 Min 150 * TO3PLTO3PL
TO3PL

TO3PL
2558 - 15 1500 800 5 3A 25 Min 250 * TO3PBLTO3PBL
TO3PBL

TO3PBL
2685 2686 8 160 150 5 1A 5000 Min 75 * TO3PMLTO3PML
TO3PML

TO3PML
2559 2560 16 120 120 6 1A 2000 Min 75 *
270 271 10 100 100 5 500 1000 Min 125 TO3PNTO3PN
TO3PN

TO3PN
274 275 4 80 80 5 80 3000 50 TO66TO66
TO66

TO66
272 - 2 50 40 12 - 25000 Min 10 * TO202TO202
TO202

TO202
265 - 0.5 50 (CES) 50 13 75 10000 Min 6.25 *
256 - 28 600 400 10 6A 30 Min 150 TO218TO218
TO218

TO218
2317 - 15 500 450 5 1A 300 Min 105 *
2638 - 7 400 400 6 1.5A 150 Min 80 * TO220TO220
TO220

TO220
2315 - 8 400 200 6 2A 125 60
2343 2344 12 120 120 5 200 1000 Min 80
261 262 8 100 100 5 120 1000 Min 65
263 264 10 100 100 5 250 1000 Min 65
2545 2546 5 70 60 5 - 2000 Min 30 *
2332 - 2 60±10 60±10 6 2 4000 20
2334 - 5 60±10 60±10 6 500 4000 40
266 - 0.5 50 50 13 - 40000 Min 6.25
268 269 2 50 50 13 100 1000 Min 10
267 - 0.5 30 30 13 - 90000 Min 6.25
2550 - 10 500 400 12 0.5 150 Min 50 *
2540 - 6 600 400 5 1A 600 Min 25 * TO220 (full pack)TO220 (full pack)
TO220 (full pack)

TO220 (full pack)
2543 - 6 300 250 (CER) 20 6A 2000 Min 40 *
2553 - 12 300 200 6 1A 500 Min 30 *
2547 2548 8 110 100 6 - 4000 30 * / 20 *
2551 2552 10 70 60 6 - 5000 30 *
2693 2694 6 110 110 5 1A 5000 Min 30 *
2557 - 15 200 200 7 1A 1500 Min 100 * TO247TO247
TO247

TO247
- 17 0.5 100 100 12 - 10000 0.625 TO92TO92
TO92

TO92
46 - 0.5 100 100 12 - 10000 0.625
2341 2342 1 100 80 7 100 2000 Min 1
172A - 0.3 40 40 12 50 7000 Min 0.4
48 - 1 60 50 (CES) 12 - 25000 Min 1 TO92 (giant)TO92 (giant)
TO92 (giant)

TO92 (giant)
2644 - 2 60±10 60±1 8 500 2000 Min 0.9
2544 - 1.5 120 120 6 - 1000 Min 10 * TO126TO126
TO126

TO126
253 254 4 100 100 5 100 2000 40 *
2554 2555 7 70 60 6 - 1500 Min 40 *
2345 2346 6 120 120 5 150 750 Min 60 SOT-82SOT-82
SOT-82

SOT-82
2404 2405 0.3 40 30 10 100 4000 Min 0.350 SOT-23SOT-23
SOT-23

SOT-23
2426 2427 0.5 90 80 (CER) 5 100 2000 Min 1 SOT-89SOT-89
SOT-89

SOT-89
2340 - 8 60±10 60±10 7 - 2000 Min 45 N PackN Pack
N Pack

N Pack
2351 2352 4 100 80 5 0.4 1000 Min 1
2556 - 8 110 100 6 - 1500 Min 40 * Silicon NPN TransistorSilicon NPN Transistor
Silicon NPN Transistor